نویسنده
Karagöz, Ayşe, Şengül, Yasemin, Başım, Gül Bahar
تاریخ انتشار
2014
محل انتشار
-
ECS
موضوع
Spinodal decomposition, Phase-separation, Optimization
نوع
دوره ای
زبان
انگلیسی
دیجیتال
بله
نسخه خطی
خیر
کتابخانه
دانشگاه اوزیغین
شناسه دارایی کتابخانه
1938-5862
شماره ثبت
bfbc0672-c0e8-4b76-9ec1-9c3522a2b741
محل کتابخانه
Natural and Mathematical Sciences, Mechanical Engineering
تاریخ
2014
یادداشتها
Due to copyright restrictions, the access to the full text of this article is only available via subscription.
متن نمونه
Chemical mechanical planarization (CMP) process enables topographic selectivity through formation of a protective oxide thin film on the recessed locations of the deposited metal layer, while a continuous chemical oxidation reaction is followed by mechanical abrasion takes place on the protruding locations. This paper demonstrates a new approach to CMP process optimization in terms of analyzing the nano-scale surface topography of the protective metal oxide films and modeling their growth through a Cahn-Hilliard equation (CHE) approach as an alternative to classical nucleation theory. It is observed that the material removal rate mechanisms and the consequent planarization performance depend on the nature of nucleation of the metal oxide films, which is a function of the oxidizer concentration of the CMP slurry.
DOI
10.1149/06117.0015ecst
