A Cahn-Hilliard modeling of metal oxide thin films for advanced CMP applications

العنوان A Cahn-Hilliard modeling of metal oxide thin films for advanced CMP applications
المؤلف Karagöz, Ayşe, Şengül, Yasemin, Başım, Gül Bahar
تاريخ النشر: 2014
مكان النشر - ECS
الموضوع Spinodal decomposition, Phase-separation, Optimization
النوع دورية
اللغة الإنجليزية
رقمي نعم
مخطوط لا
المكتبة: جامعة اوزيجين
معرف أصل المكتبة 1938-5862
رقم السجل bfbc0672-c0e8-4b76-9ec1-9c3522a2b741
موقع المكتبة Natural and Mathematical Sciences, Mechanical Engineering
التاريخ 2014
ملاحظات Due to copyright restrictions, the access to the full text of this article is only available via subscription.
نص عينة Chemical mechanical planarization (CMP) process enables topographic selectivity through formation of a protective oxide thin film on the recessed locations of the deposited metal layer, while a continuous chemical oxidation reaction is followed by mechanical abrasion takes place on the protruding locations. This paper demonstrates a new approach to CMP process optimization in terms of analyzing the nano-scale surface topography of the protective metal oxide films and modeling their growth through a Cahn-Hilliard equation (CHE) approach as an alternative to classical nucleation theory. It is observed that the material removal rate mechanisms and the consequent planarization performance depend on the nature of nucleation of the metal oxide films, which is a function of the oxidizer concentration of the CMP slurry.
DOI 10.1149/06117.0015ecst
عرض في المصدر جامعة اوزيجين جامعة اوزيجين - محرك بحث المخطوطات العثمانية
جامعة اوزيجين - محرك بحث المخطوطات العثمانية جامعة اوزيجين

A Cahn-Hilliard modeling of metal oxide thin films for advanced CMP applications

المؤلف Karagöz, Ayşe, Şengül, Yasemin, Başım, Gül Bahar
تاريخ النشر 2014
مكان النشر - ECS
الموضوع Spinodal decomposition, Phase-separation, Optimization
النوع دورية
اللغة الإنجليزية
رقمي نعم
مخطوط لا
المكتبة جامعة اوزيجين
معرف أصل المكتبة 1938-5862
رقم السجل bfbc0672-c0e8-4b76-9ec1-9c3522a2b741
موقع المكتبة Natural and Mathematical Sciences, Mechanical Engineering
التاريخ 2014
ملاحظات Due to copyright restrictions, the access to the full text of this article is only available via subscription.
نص عينة Chemical mechanical planarization (CMP) process enables topographic selectivity through formation of a protective oxide thin film on the recessed locations of the deposited metal layer, while a continuous chemical oxidation reaction is followed by mechanical abrasion takes place on the protruding locations. This paper demonstrates a new approach to CMP process optimization in terms of analyzing the nano-scale surface topography of the protective metal oxide films and modeling their growth through a Cahn-Hilliard equation (CHE) approach as an alternative to classical nucleation theory. It is observed that the material removal rate mechanisms and the consequent planarization performance depend on the nature of nucleation of the metal oxide films, which is a function of the oxidizer concentration of the CMP slurry.
DOI 10.1149/06117.0015ecst
جامعة اوزيجين - محرك بحث المخطوطات العثمانية
جامعة اوزيجين يتم إعادة توجيهك...

يرجى الانتظار