Author
Karagöz, Ayşe, Şengül, Yasemin, Başım, Gül Bahar
Publication Date
2014
Publication Place
-
ECS
Subject
Spinodal decomposition, Phase-separation, Optimization
Type
Periodical
Language
English
Digital
Yes
Manuscript
No
Library
Özyeğin University
Library Asset ID
1938-5862
Record ID
bfbc0672-c0e8-4b76-9ec1-9c3522a2b741
Library Location
Natural and Mathematical Sciences, Mechanical Engineering
Date
2014
Notes
Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Sample Text
Chemical mechanical planarization (CMP) process enables topographic selectivity through formation of a protective oxide thin film on the recessed locations of the deposited metal layer, while a continuous chemical oxidation reaction is followed by mechanical abrasion takes place on the protruding locations. This paper demonstrates a new approach to CMP process optimization in terms of analyzing the nano-scale surface topography of the protective metal oxide films and modeling their growth through a Cahn-Hilliard equation (CHE) approach as an alternative to classical nucleation theory. It is observed that the material removal rate mechanisms and the consequent planarization performance depend on the nature of nucleation of the metal oxide films, which is a function of the oxidizer concentration of the CMP slurry.
DOI
10.1149/06117.0015ecst
