Back to Search

Metal oxide thin film characterization for new generation chemical mechanical planarization development

Title	Metal oxide thin film characterization for new generation chemical mechanical planarization development
Author	Başım, Gül Bahar, Karagöz, Ayşe
Publication Date:	2016
Publication Place	- The Electrochemical Society
Subject	Characterization, Chemical mechanical polishing, Dielectric materials, Metallic compounds, Metals, Microelectronics, Oxide films, Semiconductor device manufacture, Semiconductor devices, Semiconductor materials
Type	Periodical
Language	English
Digital	Yes
Manuscript	No
Library:	Özyeğin University
Library Asset ID	1938-5862
Record ID	7d6a6dbc-1c36-44f6-b2df-e34f0cc51ead
Library Location	Mechanical Engineering
Date	2016
Sample Text	This study targets to create a basis for the process development in the new generation semiconductor industry dealing with atomic scale devices. We focus on the CMP process development as it is used for the current and future semiconductor materials in microelectronics industry for metallic, semiconductor and dielectric materials. Particularly, formation and atomic level removal mechanisms of the CMP induced metal oxide thin films for metallic layers and chemically modified hydrated layer interaction for the semiconductor films are presented as a focus for the new generation device manufacturing.
DOI	10.1149/07203.0067ecst

View in source Özyeğin University Özyeğin University - Historical works, archives, and periodicals search engine

Özyeğin University

Metal oxide thin film characterization for new generation chemical mechanical planarization development

Author Başım, Gül Bahar, Karagöz, Ayşe

Publication Date 2016

Publication Place - The Electrochemical Society

Subject Characterization, Chemical mechanical polishing, Dielectric materials, Metallic compounds, Metals, Microelectronics, Oxide films, Semiconductor device manufacture, Semiconductor devices, Semiconductor materials

Type Periodical

Language English

Digital Yes

Manuscript No

Library Özyeğin University

Library Asset ID 1938-5862

Record ID 7d6a6dbc-1c36-44f6-b2df-e34f0cc51ead

Library Location Mechanical Engineering

Date 2016

Sample Text This study targets to create a basis for the process development in the new generation semiconductor industry dealing with atomic scale devices. We focus on the CMP process development as it is used for the current and future semiconductor materials in microelectronics industry for metallic, semiconductor and dielectric materials. Particularly, formation and atomic level removal mechanisms of the CMP induced metal oxide thin films for metallic layers and chemically modified hydrated layer interaction for the semiconductor films are presented as a focus for the new generation device manufacturing.

DOI 10.1149/07203.0067ecst