Author
Elçioğlu, E. B., Didari, Azadeh, Özyurt, T. O., Mengüç, Mustafa Pınar
Publication Date
2019-03-06
Publication Place
-
IOP Publishing
Subject
Near-field thermal radiation, Energy harvesting, Wafer material, Doping
Type
Periodical
Language
English
Digital
Yes
Manuscript
No
Library
Özyeğin University
Library Asset ID
0022-3727
Record ID
ff65a97b-96ff-4109-97f1-38482657707c
Library Location
Mechanical Engineering
Date
2019-03-06
Notes
TÜBİTAK ; Center for Energy, Environment and Economy (CEEE) at Ozyegin University, Istanbul, Turkey
Sample Text
Near-field radiative transfer (NFRT) refers to the energy transfer mechanism which takes place between media separated by distances comparable to or much smaller than the dominant wavelength of emission. NFRT is due to the contribution of evanescent waves and coherent nature of the energy transfer within nano-gaps, and can exceed Planck's blackbody limit. As researchers further investigate this phenomenon and start fabrication of custom-made platforms, advances in utilization of NFRT in energy harvesting applications move forward day by day. In designing and manufacturing such harvesting devices, chemical and physical properties of surfaces and wafers are important for development of effective solutions. In this work, we compare several III-V group compound semiconductor wafers (mainly GaAs, InSb, and InP) from fabrication point of view, in order to explore their possible use in future devices. The results presented here show that the type of dopant, wafer temperature, and gap size are very important factors as they affect the NFRT rates. GaAs, InSb, and InP wafers significantly enhance the near-field fluxes beyond the blackbody rates, and n-type InSb yields to the highest enhancement. For GaAs, p-type yielded a higher radiative flux compared to n-type GaAs, as oppose to n-type InSb outperforming its p-type and undoped counterparts. Furthermore, the possible use of n-InSb as the TPV cell at 550K is discussed for effective energy harvesting. These findings can be useful for determination of the proper material type for emitting and non-emitting NFRT-based energy harvesting devices.
DOI
10.1088/1361-6463/aaf947
Cilt
52
