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Chemical mechanical planarization studies on gallium nitride for improved performance

Title	Chemical mechanical planarization studies on gallium nitride for improved performance
Author	Karagöz, Ayşe, Başım, Gül Bahar, Siebert, M., Leunissen, L. A. H.
Publication Date:	2015
Publication Place	- IEEE
Subject	III-V semiconductors, Chemical mechanical polishing, Crystallography, Gallium compounds, Planarisation, Silicon compounds, Wide band gap semiconductors
Type	Document
Language	English
Digital	Yes
Manuscript	No
Library:	Özyeğin University
Library Asset ID	2-s2.0-84964510423
Record ID	6ea789dd-2e3a-41c6-a49e-25e9ae01069a
Library Location	Mechanical Engineering
Date	2015
Notes	Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Sample Text	In this study, a systematic experimental approach has been followed to determine the conditions to promote material removal rate while controlling surface defectivity for GaN CMP. Silica based slurries were used to optimize the CMP conditions for a commercial GaN sample as a function of pH, and type of polishing pad and conditioning. In addition, CMP responses of Face A and Face B type crystallographic GaN surfaces were evaluated and compared to the 2" GaN wafer with unknown surface crystallographic structure. It is observed that the contact angle responses of the different crystallographic surfaces can help identify the type of GaN surface and support predicting the CMP performance simultaneously.

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Özyeğin University

Chemical mechanical planarization studies on gallium nitride for improved performance

Author Karagöz, Ayşe, Başım, Gül Bahar, Siebert, M., Leunissen, L. A. H.

Publication Date 2015

Publication Place - IEEE

Subject III-V semiconductors, Chemical mechanical polishing, Crystallography, Gallium compounds, Planarisation, Silicon compounds, Wide band gap semiconductors

Type Document

Language English

Digital Yes

Manuscript No

Library Özyeğin University

Library Asset ID 2-s2.0-84964510423

Record ID 6ea789dd-2e3a-41c6-a49e-25e9ae01069a

Library Location Mechanical Engineering

Date 2015

Notes Due to copyright restrictions, the access to the full text of this article is only available via subscription.

Sample Text In this study, a systematic experimental approach has been followed to determine the conditions to promote material removal rate while controlling surface defectivity for GaN CMP. Silica based slurries were used to optimize the CMP conditions for a commercial GaN sample as a function of pH, and type of polishing pad and conditioning. In addition, CMP responses of Face A and Face B type crystallographic GaN surfaces were evaluated and compared to the 2" GaN wafer with unknown surface crystallographic structure. It is observed that the contact angle responses of the different crystallographic surfaces can help identify the type of GaN surface and support predicting the CMP performance simultaneously.