Model-based optimization of CMP process parameters for uniform material removal selectivity in cu/barrier planarization

Name: Model-based optimization of CMP process parameters for uniform material removal selectivity in cu/barrier planarization
Author: Akbar, Wazir, Ertunç, Özgür

İsim	Model-based optimization of CMP process parameters for uniform material removal selectivity in cu/barrier planarization
Yazar	Akbar, Wazir, Ertunç, Özgür
Basım Tarihi:	2022-02-01
Basım Yeri	- IOP Publishing
Tür	Süreli Yayın
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	2162-8769
Kayıt Numarası	b8b85a50-8de7-480c-bcdc-906396df8335
Lokasyon	Mechanical Engineering
Tarih	2022-02-01
Örnek Metin	Chemical mechanical planarization is a process of achieving planar surfaces in the semiconductor manufacturing industry. The planarization of a surface is achieved by material removal from the wafer surface. The material removal depends on material properties and the process input parameters. Several studies have investigated the role of slurry chemistry to achieve a certain material removal selectivity of different materials on a patterned wafer. Here we propose a methodology of achieving planar patterned surface of Cu/Mn/MnN system using a model-based optimization for mechanical process parameters. The parameters include applied force, slurry solid concentration, and abrasive particle size. The methodology has been developed via optimization using a genetic algorithm. The proposed methodology suggests that a lower downforce is the key parameter to achieve the desired material removal selectivity and planarity. The first part of the study suggests a low material removal rate (MRR) to achieve a lower standard deviation in MRR. The second part investigates the standard deviation in the thickness removed in the average time needed to remove a known thickness of the materials under consideration. It has been found that the application of lower downforce can also minimize the standard deviation in the thickness removed and a planar patterned surface can be achieved.
DOI	10.1149/2162-8777/ac4ffb
Cilt	11

Kaynağa git Özyeğin Üniversitesi

Aramaya Dön

Özyeğin Üniversitesi

Kaynağa git

Model-based optimization of CMP process parameters for uniform material removal selectivity in cu/barrier planarization

Yazar Akbar, Wazir, Ertunç, Özgür

Basım Tarihi 2022-02-01

Basım Yeri - IOP Publishing

Tür Süreli Yayın

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 2162-8769

Kayıt Numarası b8b85a50-8de7-480c-bcdc-906396df8335

Lokasyon Mechanical Engineering

Tarih 2022-02-01

Örnek Metin Chemical mechanical planarization is a process of achieving planar surfaces in the semiconductor manufacturing industry. The planarization of a surface is achieved by material removal from the wafer surface. The material removal depends on material properties and the process input parameters. Several studies have investigated the role of slurry chemistry to achieve a certain material removal selectivity of different materials on a patterned wafer. Here we propose a methodology of achieving planar patterned surface of Cu/Mn/MnN system using a model-based optimization for mechanical process parameters. The parameters include applied force, slurry solid concentration, and abrasive particle size. The methodology has been developed via optimization using a genetic algorithm. The proposed methodology suggests that a lower downforce is the key parameter to achieve the desired material removal selectivity and planarity. The first part of the study suggests a low material removal rate (MRR) to achieve a lower standard deviation in MRR. The second part investigates the standard deviation in the thickness removed in the average time needed to remove a known thickness of the materials under consideration. It has been found that the application of lower downforce can also minimize the standard deviation in the thickness removed and a planar patterned surface can be achieved.

DOI 10.1149/2162-8777/ac4ffb

Cilt 11