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Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method

Title	Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method
Author	Maryam Nayeri ; Hamed Taheri ; Fatemeh Ostovari
Publication Date:	1379-01
Subject	cvd method, monolayer, raman spectroscopy, ws2
Type	Periodical
Language	Persian
Digital	Yes
Manuscript	No
Library:	University of Toronto
Library Asset ID	ISSN: 2008-4854, EISSN: 2783-2538, DOI: 10.22075/jme.2023.28234.2327
Record ID	cdi_doaj_primary_oai_doaj_org_article_69ece8aa234546d5920a89560fd27e5f
Library Location	DOAJ Directory of Open Access Journals
Date	1379-01
Notes	Monolayer WS2 offers great promise for use in optical devices due to its direct bandgap and high photoluminescence intensity. In this way, large-area and high-quality materials are essential for the implementation of technological applications. In this research, we Synthesize the WS2 monolayer under controlled temperature conditions and characterize the films using Fourier-transform infrared spectroscopy (FTIR), Raman, x-ray photoelectron spectroscopies, and scanning electron microscope (SEM). The results show that with the introduction of argon gas as a carrier, the quality of the layer improves, and the growth level of WS2 increases, and as a result, the films show an average coating thickness of 43 nm. By controlling the growth temperature and timely entry of argon-carrying gas, the WO3 precursor is more effectively reduced and the oxidative etching of the synthesized monolayers is protected. The addition of hydrogen more effectively reduces the WO3 precursor and protects against oxidative etching of the synthesized monolayers. The obtained results indicate the complete synthesis of a two-dimensional structure (2D) of a single layer with sheets consisting of a crystal size of about 26 nm with a thickness of about 43 nm.
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Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method

Author Maryam Nayeri ; Hamed Taheri ; Fatemeh Ostovari

Publication Date 1379-01

Subject cvd method, monolayer, raman spectroscopy, ws2

Type Periodical

Language Persian

Digital Yes

Manuscript No

Library University of Toronto

Library Asset ID ISSN: 2008-4854, EISSN: 2783-2538, DOI: 10.22075/jme.2023.28234.2327

Record ID cdi_doaj_primary_oai_doaj_org_article_69ece8aa234546d5920a89560fd27e5f

Library Location DOAJ Directory of Open Access Journals

Date 1379-01

Notes Monolayer WS2 offers great promise for use in optical devices due to its direct bandgap and high photoluminescence intensity. In this way, large-area and high-quality materials are essential for the implementation of technological applications. In this research, we Synthesize the WS2 monolayer under controlled temperature conditions and characterize the films using Fourier-transform infrared spectroscopy (FTIR), Raman, x-ray photoelectron spectroscopies, and scanning electron microscope (SEM). The results show that with the introduction of argon gas as a carrier, the quality of the layer improves, and the growth level of WS2 increases, and as a result, the films show an average coating thickness of 43 nm. By controlling the growth temperature and timely entry of argon-carrying gas, the WO3 precursor is more effectively reduced and the oxidative etching of the synthesized monolayers is protected. The addition of hydrogen more effectively reduces the WO3 precursor and protects against oxidative etching of the synthesized monolayers. The obtained results indicate the complete synthesis of a two-dimensional structure (2D) of a single layer with sheets consisting of a crystal size of about 26 nm with a thickness of about 43 nm.

Erişim bilgileri Access content in Directory of Open Access Journals, Available Online