A Monte Carlo simulation for phonon transport within silicon structures at nanoscales with heat generation

Title A Monte Carlo simulation for phonon transport within silicon structures at nanoscales with heat generation
Author Wong, B. T., Francoeur, M., Mengüç, Mustafa Pınar
Publication Date: 2011-04
Publication Place - Elsevier
Subject Monte Carlo, Phonon transport, Silicon thin film, Heat generation, Ballistic transport, Near-field thermal radiation, The Fourier law, Heat diffusion equation
Type Periodical
Language English
Digital Yes
Manuscript No
Library: Özyeğin University
Library Asset ID 0017-9310
Record ID f4e73fa3-41ab-45aa-b89d-dd396ddbadcc
Library Location Mechanical Engineering
Date 2011-04
Notes the Kentucky Science and Engineering Foundation ; European Commission
Sample Text Nanoscale phonon transport within silicon structures subjected to internal heat generation was explored. A Monte Carlo simulation was used. The simulation procedures differed from the current existing methods in which phonons below a predefined “reference temperature” were not accounted to reduce memory storage and computational resources. Results indicated that the heat diffusion equation significantly underestimates temperature distribution at nanoscales in the presence of an external heat source. Discussions on temperature distribution inside silicon thin film when heated by a pulsed laser, an electron beam or due to near-field thermal radiation effects were also provided.
DOI 10.1016/j.ijheatmasstransfer.2010.10.039
Cilt 54
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A Monte Carlo simulation for phonon transport within silicon structures at nanoscales with heat generation

Author Wong, B. T., Francoeur, M., Mengüç, Mustafa Pınar
Publication Date 2011-04
Publication Place - Elsevier
Subject Monte Carlo, Phonon transport, Silicon thin film, Heat generation, Ballistic transport, Near-field thermal radiation, The Fourier law, Heat diffusion equation
Type Periodical
Language English
Digital Yes
Manuscript No
Library Özyeğin University
Library Asset ID 0017-9310
Record ID f4e73fa3-41ab-45aa-b89d-dd396ddbadcc
Library Location Mechanical Engineering
Date 2011-04
Notes the Kentucky Science and Engineering Foundation ; European Commission
Sample Text Nanoscale phonon transport within silicon structures subjected to internal heat generation was explored. A Monte Carlo simulation was used. The simulation procedures differed from the current existing methods in which phonons below a predefined “reference temperature” were not accounted to reduce memory storage and computational resources. Results indicated that the heat diffusion equation significantly underestimates temperature distribution at nanoscales in the presence of an external heat source. Discussions on temperature distribution inside silicon thin film when heated by a pulsed laser, an electron beam or due to near-field thermal radiation effects were also provided.
DOI 10.1016/j.ijheatmasstransfer.2010.10.039
Cilt 54
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