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Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method

Title	Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method
Author	Maryam Nayeri
Subject	cvd method, monolayer, raman spectroscopy, ws2
Type	Document
Language	Undetermined
Digital	Yes
Manuscript	No
Library:	The Queen's University of Belfast Libraries
Library Asset ID	ISSN: 2008-4854, EISSN: 2783-2538, DOI: 10.22075/jme.2023.28234.2327
Record ID	cdi_doaj_primary_oai_doaj_org_article_69ece8aa234546d5920a89560fd27e5f
Açıklama	Monolayer WS2 offers great promise for use in optical devices due to its direct bandgap and high photoluminescence intensity. In this way, large-area and high-quality materials are essential for the implementation of technological applications. In this research, we Synthesize the WS2 monolayer under controlled temperature conditions and characterize the films using Fourier-transform infrared spectroscopy (FTIR), Raman, x-ray photoelectron spectroscopies, and scanning electron microscope (SEM). The results show that with the introduction of argon gas as a carrier, the quality of the layer improves, and the growth level of WS2 increases, and as a result, the films show an average coating thickness of 43 nm. By controlling the growth temperature and timely entry of argon-carrying gas, the WO3 precursor is more effectively reduced and the oxidative etching of the synthesized monolayers is protected. The addition of hydrogen more effectively reduces the WO3 precursor and protects against oxidative etching of the synthesized monolayers. The obtained results indicate the complete synthesis of a two-dimensional structure (2D) of a single layer with sheets consisting of a crystal size of about 26 nm with a thickness of about 43 nm.
Şuna bir parçasıdır	مجله مدل سازی در مهندسی, 1379-01, Vol.21 (73), p.63-69
Kaynak	DOAJ Directory of Open Access Journals

View in source The Queen's University of Belfast Libraries

The Queen's University of Belfast Libraries

Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method

Author Maryam Nayeri

Subject cvd method, monolayer, raman spectroscopy, ws2

Type Document

Language Undetermined

Digital Yes

Manuscript No

Library The Queen's University of Belfast Libraries

Library Asset ID ISSN: 2008-4854, EISSN: 2783-2538, DOI: 10.22075/jme.2023.28234.2327

Record ID cdi_doaj_primary_oai_doaj_org_article_69ece8aa234546d5920a89560fd27e5f

Açıklama Monolayer WS2 offers great promise for use in optical devices due to its direct bandgap and high photoluminescence intensity. In this way, large-area and high-quality materials are essential for the implementation of technological applications. In this research, we Synthesize the WS2 monolayer under controlled temperature conditions and characterize the films using Fourier-transform infrared spectroscopy (FTIR), Raman, x-ray photoelectron spectroscopies, and scanning electron microscope (SEM). The results show that with the introduction of argon gas as a carrier, the quality of the layer improves, and the growth level of WS2 increases, and as a result, the films show an average coating thickness of 43 nm. By controlling the growth temperature and timely entry of argon-carrying gas, the WO3 precursor is more effectively reduced and the oxidative etching of the synthesized monolayers is protected. The addition of hydrogen more effectively reduces the WO3 precursor and protects against oxidative etching of the synthesized monolayers. The obtained results indicate the complete synthesis of a two-dimensional structure (2D) of a single layer with sheets consisting of a crystal size of about 26 nm with a thickness of about 43 nm.

Şuna bir parçasıdır مجله مدل سازی در مهندسی, 1379-01, Vol.21 (73), p.63-69

Kaynak DOAJ Directory of Open Access Journals