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تخليق أحادي الطبقة نانومتر WS2 بطريقة ترسيب البخار الكيميائي

العنوان	تخليق أحادي الطبقة نانومتر WS2 بطريقة ترسيب البخار الكيميائي
المؤلف	مريم نيري
الموضوع	طريقة الأقراص المضغوطة، أحادي الطبقة، التحليل الطيفي رامان، ws2
النوع	وثيقة
اللغة	غير محدد
رقمي	نعم
مخطوط	لا
المكتبة:	مكتبات جامعة كوينز في بلفاست
معرف أصل المكتبة	ISSN: 2008-4854, EISSN: 2783-2538, DOI: 10.22075/jme.2023.28234.2327
رقم السجل	cdi_doaj_primary_oai_doaj_org_article_69ece8aa234546d5920a89560fd27e5f
Açıklama	Monolayer WS2 offers great promise for use in optical devices due to its direct bandgap and high photoluminescence intensity. In this way, large-area and high-quality materials are essential for the implementation of technological applications. In this research, we Synthesize the WS2 monolayer under controlled temperature conditions and characterize the films using Fourier-transform infrared spectroscopy (FTIR), Raman, x-ray photoelectron spectroscopies, and scanning electron microscope (SEM). The results show that with the introduction of argon gas as a carrier, the quality of the layer improves, and the growth level of WS2 increases, and as a result, the films show an average coating thickness of 43 nm. By controlling the growth temperature and timely entry of argon-carrying gas, the WO3 precursor is more effectively reduced and the oxidative etching of the synthesized monolayers is protected. The addition of hydrogen more effectively reduces the WO3 precursor and protects against oxidative etching of the synthesized monolayers. The obtained results indicate the complete synthesis of a two-dimensional structure (2D) of a single layer with sheets consisting of a crystal size of about 26 nm with a thickness of about 43 nm.
Şuna bir parçasıdır	مجله مدل سازی در مهندسی, 1379-01, Vol.21 (73), p.63-69
Kaynak	DOAJ Directory of Open Access Journals

عرض في المصدر مكتبات جامعة كوينز في بلفاست مكتبات جامعة كوينز في بلفاست - محرك بحث المخطوطات العثمانية

مكتبات جامعة كوينز في بلفاست

تخليق أحادي الطبقة نانومتر WS2 بطريقة ترسيب البخار الكيميائي

المؤلف مريم نيري

الموضوع طريقة الأقراص المضغوطة، أحادي الطبقة، التحليل الطيفي رامان، ws2

النوع وثيقة

اللغة غير محدد

رقمي نعم

مخطوط لا

المكتبة مكتبات جامعة كوينز في بلفاست

معرف أصل المكتبة ISSN: 2008-4854, EISSN: 2783-2538, DOI: 10.22075/jme.2023.28234.2327

رقم السجل cdi_doaj_primary_oai_doaj_org_article_69ece8aa234546d5920a89560fd27e5f

Açıklama Monolayer WS2 offers great promise for use in optical devices due to its direct bandgap and high photoluminescence intensity. In this way, large-area and high-quality materials are essential for the implementation of technological applications. In this research, we Synthesize the WS2 monolayer under controlled temperature conditions and characterize the films using Fourier-transform infrared spectroscopy (FTIR), Raman, x-ray photoelectron spectroscopies, and scanning electron microscope (SEM). The results show that with the introduction of argon gas as a carrier, the quality of the layer improves, and the growth level of WS2 increases, and as a result, the films show an average coating thickness of 43 nm. By controlling the growth temperature and timely entry of argon-carrying gas, the WO3 precursor is more effectively reduced and the oxidative etching of the synthesized monolayers is protected. The addition of hydrogen more effectively reduces the WO3 precursor and protects against oxidative etching of the synthesized monolayers. The obtained results indicate the complete synthesis of a two-dimensional structure (2D) of a single layer with sheets consisting of a crystal size of about 26 nm with a thickness of about 43 nm.

Şuna bir parçasıdır مجله مدل سازی در مهندسی, 1379-01, Vol.21 (73), p.63-69

Kaynak DOAJ Directory of Open Access Journals