Author
Başım, Gül Bahar, Karagöz, Ayşe, Özdemir, Zeynep
Publication Date
2013
Publication Place
-
ECS
Type
Document
Language
English
Digital
Yes
Manuscript
No
Library
Özyeğin University
Library Asset ID
978-1-60768-427-5
Record ID
6e9c7e8a-b3f3-4661-b782-65ce21c3686b
Library Location
Mechanical Engineering
Date
2013
Notes
Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Sample Text
This paper focuses on the planarization of metallic films in microelectronics manufacturing by CMP through investigation of metal oxide thin films forming as a result of the chemical component of the process. Tungsten planarization is discussed as a model to establish the role of metal oxide nano-films in achieving material removal through their formation characteristics during polishing. The findings indicate a protective oxide film formation on tungsten, which tends to nucleate at high concentrations of oxidizers and enables material removal through the interaction of nano-particles in the slurry with the surface oxide hillocks.
DOI
10.1149/05039.0003ecst
Cilt
50
