Author
Başım, Gül Bahar, Karagöz, Ayşe, Chen, L., Vakarelski, I.
Publication Date
2013
Publication Place
-
Cambridge University Press
Subject
CMP, Ge, Self-assembly
Type
Document
Language
English
Digital
Yes
Manuscript
No
Library
Özyeğin University
Library Asset ID
2-s2.0-84899822148
Record ID
5e7a09a2-2404-42e5-8919-402e43521be1
Library Location
Mechanical Engineering
Date
2013
Notes
Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Sample Text
In this study, slurry formulations in the presence of self-assembled surfactant structures were investigated for Ge/SiO2 CMP applications in the absence and presence of oxidizers. Both anionic (sodium dodecyl sulfate-SDS) and cationic (cetyl trimethyl ammonium bromide-C12TAB) micelles were used in the slurry formulations as a function of pH and oxidizer concentration. CMP performances of Ge and SiO2 wafers were evaluated in terms of material removal rates, selectivity and surface quality. The material removal rate responses were also assessed through AFM wear rate tests to obtain a faster response for preliminary analyses. The surfactant adsorption characteristics were studied through surface wettability responses of the Ge and SiO2 wafers through contact angle measurements. It was observed that the self-assembled surfactant structures can help obtain selectivity on the silica/germanium system at low concentrations of the oxidizer in the slurry.
DOI
10.1557/opl.2013.971
Cilt
1560
