Author
Turt, Doğancan, Akgiray, Ahmed Halid
Publication Date
2021
Publication Place
-
IEEE
Subject
GaN HEMT, High efficiency, Power added efficiency (PAE), Power amplifier (PA), Wideband
Type
Document
Language
English
Digital
Yes
Manuscript
No
Library
Özyeğin University
Library Asset ID
978-166542816-3
Record ID
71c61e51-34d0-47a1-8934-7494b1f4f1d9
Library Location
Electrical & Electronics Engineering
Date
2021
Notes
Cree Inc.
Sample Text
This paper presents the design and measurements of a broadband GaN HEMT power amplifier intended for point-to-point radios, electronic warfare systems, and test and measurement applications. The proposed power amplifier is fabricated, and small/large-signal measurements are collected. Fabricated design is conducted for an input power of 26 dBm and obtained between 39.6 - 40.9 dBm output power. Power added efficiency (PAE) of 45.9 % to 61.4 % is reached over the band (0.5 - 2.5 GHz). In this study, Wolfspeed's CGH40010F transistor is used in CW mode. In order to decide optimum source and load impedances of the transistor, load- source-pull simulations are conducted. After load- source-pull simulations, proper source and load matching networks are established to obtain optimum output power and efficiency values over the band.
DOI
10.1109/ICRAMET53537.2021.9650475
