Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method
(Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method)
| İsim | Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method |
|---|---|
| İsim Orijinal | Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method |
| Yazar | Maryam Nayeri, Hamed Taheri, Fatemeh Ostovari |
| Basım Tarihi: | 1379 |
| Basım Yeri | Semnan University - Semnan University |
| Konu | cvd method, monolayer, raman spectroscopy, ws2 |
| Tür | Süreli Yayın |
| Dil | Arapça |
| Dijital | Evet |
| Yazma | Hayır |
| Kütüphane: | Girona Üniversitesi |
| Demirbaş Numarası | ISSN: 2008-4854, EISSN: 2783-2538, DOI: 10.22075/jme.2023.28234.2327 |
| Kayıt Numarası | cdi_doaj_primary_oai_doaj_org_article_69ece8aa234546d5920a89560fd27e5f |
| Lokasyon | Available Online |
| Tarih | 1379 |
| Örnek Metin | Monolayer WS2 offers great promise for use in optical devices due to its direct bandgap and high photoluminescence intensity. In this way, large-area and high-quality materials are essential for the implementation of technological applications. In this research, we Synthesize the WS2 monolayer under controlled temperature conditions and characterize the films using Fourier-transform infrared spectroscopy (FTIR), Raman, x-ray photoelectron spectroscopies, and scanning electron microscope (SEM). The results show that with the introduction of argon gas as a carrier, the quality of the layer improves, and the growth level of WS2 increases, and as a result, the films show an average coating thickness of 43 nm. By controlling the growth temperature and timely entry of argon-carrying gas, the WO3 precursor is more effectively reduced and the oxidative etching of the synthesized monolayers is protected. The addition of hydrogen more effectively reduces the WO3 precursor and protects against oxidative etching of the synthesized monolayers. The obtained results indicate the complete synthesis of a two-dimensional structure (2D) of a single layer with sheets consisting of a crystal size of about 26 nm with a thickness of about 43 nm. |
Diğer Nüshalar
10
Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method
Kayıt Numarası: 4689934
Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method
Kayıt Numarası: 4863019
Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method
Kayıt Numarası: 5226253
Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method
Kayıt Numarası: 5299854
Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method
Kayıt Numarası: 5302085
Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method
Kayıt Numarası: 5302518
Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method
Kayıt Numarası: 5303523
Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method
Kayıt Numarası: 5312917
Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method
Kayıt Numarası: 5334738
Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method
Kayıt Numarası: 5392625