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Hydrogenated carbon monolayer in biphenylene network offers a potential paradigm for nanoelectronic devices

Title	Hydrogenated carbon monolayer in biphenylene network offers a potential paradigm for nanoelectronic devices
Author	Demirci, S., Gorkan, T., Çallloǧlu, Ş., Özçelik, Veli Ongun, Barth, J. V., Aktürk, E., Ciraci, S.
Publication Date:	2022-09-15
Publication Place	- American Chemical Society
Type	Periodical
Language	English
Digital	Yes
Manuscript	No
Library:	Özyeğin University
Library Asset ID	1932-7447
Record ID	1f0e1799-90a0-46eb-ae47-61aeef764c2a
Library Location	Natural and Mathematical Sciences
Date	2022-09-15
Notes	Academy of Science of Turkey ; High Performance and Grid Computing Center ; National Center for High-Performance Computing of Turkey ; TUBITAK ULAKBIM ; Alexander von Humboldt-Stiftung , Ulusal Yüksek Başarımlı Hesaplama Merkezi, Istanbul Teknik Üniversitesi ; Kırıkkale Üniversitesi ; Bilim Akademisi ; TÜBİTAK ; Leibniz-Rechenzentrum
Sample Text	A metallic carbon monolayer in the biphenylene network (specified as C ohs) becomes an insulator upon hydrogenation (specified as CH ohs). Patterned dehydrogenation of this CH ohs can offer a variety of intriguing functionalities. Composite structures constituted by alternating stripes of C and CH ohs with different repeat periodicity and chirality display topological properties and can form heterostructures with a tunable band-lineup or Schottky barrier height. Alternating arrangements of these stripes of finite size enable one to also construct double barrier resonant tunneling structures and 2D, lateral nanocapacitors with high gravimetric capacitance for an efficient energy storage device. By controlled removal of H atom from a specific site or dehydrogenation of an extended zone, one can achieve antidoping or construct 0D quantum structures like antidots, antirings/loops, and supercrystals, the energy level spacing of which can be controlled with their geometry and size for optoelectronic applications. Conversely, all these device functions can be acquired also by controlled hydrogenation of a bare C ohs monolayer. Since all these processes are applied to a monolayer, the commensurability of electronically different materials is assured. These features pertain not only to CH ohs but also to fully hydrogenated Si ohs.
DOI	10.1021/acs.jpcc.2c04453
Cilt	126

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Hydrogenated carbon monolayer in biphenylene network offers a potential paradigm for nanoelectronic devices

Author Demirci, S., Gorkan, T., Çallloǧlu, Ş., Özçelik, Veli Ongun, Barth, J. V., Aktürk, E., Ciraci, S.

Publication Date 2022-09-15

Publication Place - American Chemical Society

Type Periodical

Language English

Digital Yes

Manuscript No

Library Özyeğin University

Library Asset ID 1932-7447

Record ID 1f0e1799-90a0-46eb-ae47-61aeef764c2a

Library Location Natural and Mathematical Sciences

Date 2022-09-15

Notes Academy of Science of Turkey ; High Performance and Grid Computing Center ; National Center for High-Performance Computing of Turkey ; TUBITAK ULAKBIM ; Alexander von Humboldt-Stiftung , Ulusal Yüksek Başarımlı Hesaplama Merkezi, Istanbul Teknik Üniversitesi ; Kırıkkale Üniversitesi ; Bilim Akademisi ; TÜBİTAK ; Leibniz-Rechenzentrum

Sample Text A metallic carbon monolayer in the biphenylene network (specified as C ohs) becomes an insulator upon hydrogenation (specified as CH ohs). Patterned dehydrogenation of this CH ohs can offer a variety of intriguing functionalities. Composite structures constituted by alternating stripes of C and CH ohs with different repeat periodicity and chirality display topological properties and can form heterostructures with a tunable band-lineup or Schottky barrier height. Alternating arrangements of these stripes of finite size enable one to also construct double barrier resonant tunneling structures and 2D, lateral nanocapacitors with high gravimetric capacitance for an efficient energy storage device. By controlled removal of H atom from a specific site or dehydrogenation of an extended zone, one can achieve antidoping or construct 0D quantum structures like antidots, antirings/loops, and supercrystals, the energy level spacing of which can be controlled with their geometry and size for optoelectronic applications. Conversely, all these device functions can be acquired also by controlled hydrogenation of a bare C ohs monolayer. Since all these processes are applied to a monolayer, the commensurability of electronically different materials is assured. These features pertain not only to CH ohs but also to fully hydrogenated Si ohs.

DOI 10.1021/acs.jpcc.2c04453

Cilt 126