Author
Varonen, M., Reeves, R., Kangaslahti, P., Samoska, L., Kooi, J. W., Cleary, K., Gawande, R. S., Akgiray, Ahmed Halid, Fung, A., Gaier, T., Weinreb, S., Readhead, A. C. S., Lawrence, C., Sarkozy, S., Lai, R.
Publication Date
2016-03
Publication Place
-
IEEE
Subject
Cryogenic, InP HEMT, Low-noise amplifiers (LNAs), Monolithic microwave integrated circuit (MMIC)
Type
Periodical
Language
English
Digital
Yes
Manuscript
No
Library
Özyeğin University
Library Asset ID
1557-9670
Record ID
81f77d09-08b8-47bd-9fea-baeebbf57576
Library Location
Electrical & Electronics Engineering
Date
2016-03
Notes
Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Sample Text
In this paper we discuss the design of low-noise amplifiers (LNAs) for both cryogenic and room-temperature operation in general and take the stability and linearity of the amplifiers into special consideration. Oscillations that can occur within a multi-finger transistor are studied and verified with simulations and measurements. To overcome the stability problem related to the multi-finger transistor design approach a parallel two-finger unit transistor monolithic microwave integrated circuit LNA design technique, which enables the design of wideband and high-linearity LNAs with very stable, predictable, and repeatable operation, is proposed. The feasibility of the proposed design technique is proved by demonstrating a three-stage LNA packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology that achieves more than a 20-dB gain from 75 to 116 GHz and 26-33-K noise temperature from 85 to 116 GHz when cryogenically cooled to 27 K.
DOI
10.1109/TMTT.2016.2521650
Cilt
64
