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Controlling germanium CMP selectivity through slurry mediation by surface active agents

Title	Controlling germanium CMP selectivity through slurry mediation by surface active agents
Author	Karagöz, Ayşe, Başım, Gül Bahar
Publication Date:	2015-08-10
Publication Place	- The Electrochemical Society
Subject	Chemical mechanical planarization, Germanium/silica selectivity, Shallow trench isolation, Surface active agents
Type	Periodical
Language	English
Digital	Yes
Manuscript	No
Library:	Özyeğin University
Library Asset ID	2162-8769
Record ID	a5ee6035-ac1b-49ca-bcd4-9550952cecb5
Library Location	Mechanical Engineering
Date	2015-08-10
Notes	Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Sample Text	New developments and device performance requirements in microelectronics industry add to the challenges in chemical mechanical planarization (CMP) process. One of the recently introduced materials to semiconductor manufacturing is germanium which enables improved device performance through better channel mobility in shallow trench isolation (STI) applications for advanced circuits. This paper focuses on controlling germanium/silica selectivity for advanced STI CMP applications through slurry modification by surface active agents. Surface adsorption characteristics of cationic and anionic surfactants on germanium and silica wafers are analyzed in order to control selectivity as well as the defectivity performance of the CMP applications. The effects of surfactant charge and concentration (up to self-assembly) are studied in terms of slurry stability, material removal rates and surface defectivity. Surface charge manipulation by the surfactant adsorption on the germanium surface is presented as the main criteria on the selection of the proper surfactant/oxidizer systems for CMP. The outlined correlations are systematically presented to highlight slurry modification criteria for the desired selectivity results. Consequently, the paper evaluates the slurry selectivity control and improvement criteria for the new materials introduced to microelectronics applications with CMP requirement by evaluating the germanium silica system as a model application.
DOI	10.1149/2.0151511jss
Cilt	4

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Controlling germanium CMP selectivity through slurry mediation by surface active agents

Author Karagöz, Ayşe, Başım, Gül Bahar

Publication Date 2015-08-10

Publication Place - The Electrochemical Society

Subject Chemical mechanical planarization, Germanium/silica selectivity, Shallow trench isolation, Surface active agents

Type Periodical

Language English

Digital Yes

Manuscript No

Library Özyeğin University

Library Asset ID 2162-8769

Record ID a5ee6035-ac1b-49ca-bcd4-9550952cecb5

Library Location Mechanical Engineering

Date 2015-08-10

Notes Due to copyright restrictions, the access to the full text of this article is only available via subscription.

Sample Text New developments and device performance requirements in microelectronics industry add to the challenges in chemical mechanical planarization (CMP) process. One of the recently introduced materials to semiconductor manufacturing is germanium which enables improved device performance through better channel mobility in shallow trench isolation (STI) applications for advanced circuits. This paper focuses on controlling germanium/silica selectivity for advanced STI CMP applications through slurry modification by surface active agents. Surface adsorption characteristics of cationic and anionic surfactants on germanium and silica wafers are analyzed in order to control selectivity as well as the defectivity performance of the CMP applications. The effects of surfactant charge and concentration (up to self-assembly) are studied in terms of slurry stability, material removal rates and surface defectivity. Surface charge manipulation by the surfactant adsorption on the germanium surface is presented as the main criteria on the selection of the proper surfactant/oxidizer systems for CMP. The outlined correlations are systematically presented to highlight slurry modification criteria for the desired selectivity results. Consequently, the paper evaluates the slurry selectivity control and improvement criteria for the new materials introduced to microelectronics applications with CMP requirement by evaluating the germanium silica system as a model application.

DOI 10.1149/2.0151511jss

Cilt 4