Author
Wong, B. T., Francoeur, M., Bong, V. N.-S., Mengüç, Mustafa Pınar
Publication Date
2014-08
Publication Place
-
Elsevier
Subject
Near-field thermal radiation, Near-field radiative heating, Monte Carlo phonon transport, Thermal gradient in thin film, Near-field radiation and phonon transport coupling
Type
Periodical
Language
English
Digital
Yes
Manuscript
No
Library
Özyeğin University
Library Asset ID
0022-4073
Record ID
074610e6-d0bc-419c-974e-5f0377a228c3
Library Location
Mechanical Engineering
Date
2014-08
Notes
Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Sample Text
Near-field thermal radiative exchange between two objects is typically more effective than the far-field thermal radiative exchange as the heat flux can increase up to several orders higher in magnitudes due to tunneling of evanescent waves. Such an interesting phenomenon has started to gain its popularity in nanotechnology, especially in nano-gap thermophotovoltaic systems and near-field radiative cooling of micro-/nano-devices. Here, we explored the existence of thermal gradient within an n-doped silicon thin film when it is subjected to intensive near-field thermal radiative heating. The near-field radiative power density deposited within the film is calculated using the Maxwell equations combined with fluctuational electrodynamics. A phonon Monte Carlo simulation is then used to assess the temperature gradient by treating the near-field radiative power density as the heat source. Results indicated that it is improbable to have temperature gradient with the near-field radiative heating as a continuous source unless the source comprises of ultra-short radiative pulses with a strong power density.
DOI
10.1016/j.jqsrt.2013.09.002
Cilt
143
