Author
Fung, A., Samoska, L., Bowen, J., Montanez, S., Kooi, J., Soriano, M., Jacobs, C., Manthena, R., Hoppe, D., Akgiray, Ahmed Halid, Lai, R., Mei, X., Barsky, M.
Publication Date
2020
Publication Place
-
IEEE
Subject
Indium phosphide, HEMT, Low noise, Amplifier, Coaxial module, Cryogenic
Type
Document
Language
English
Digital
Yes
Manuscript
No
Library
Özyeğin University
Library Asset ID
978-1-7281-6815-9
Record ID
708d6b7e-1258-4e6e-b24d-eb780fd12467
Library Location
Electrical & Electronics Engineering
Date
2020
Sample Text
We report a new result of a packaged low noise amplifier (LNA) module with wide bandwidth of 5 to 35 GHz and low noise temperature performance of 10 -18 K, while operated at 10 K ambient. The LNA used 3-stages of sub-50 nm gate length, 100% indium channel content indium phosphide (InP) high electron mobility transistors (HEMTs). Wideband cryogenic LNAs are important for future radio astronomy observatories. To our knowledge these results represent the lowest noise achieved in a wideband amplifier from 5-35 GHz.
DOI
10.1109/IMS30576.2020.9224106
