Connection characteristics of silicon nanowire waveguides and fabrication of physical contact switches

Title Connection characteristics of silicon nanowire waveguides and fabrication of physical contact switches
Author Bulgan, Erdal, Kanamori, Y., Hane, K.
Publication Date: 2010
Publication Place - IEEE
Subject Nanowire waveguide, Optical connection, Silicon waveguide, Optical switch, Physical contact
Type Document
Language English
Digital Yes
Manuscript No
Library: Özyeğin University
Library Asset ID 978-1-4244-4193-8
Record ID 9de525e2-564a-4e32-aef9-96ab67471800
Library Location Mechanical Engineering
Date 2010
Notes Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Sample Text Optical characteristics of silicon nanowire waveguide connections are studied both theoretically and experimentally. Effects of geometrical sizes and positional alignments on optical performance are investigated. Results show that waveguide connections with tips wider than 500 nm and tip angles greater than critical angle enable high transmittance and less sensitivity to positional misalignments. Connection with 1.5 mum-wide tip at 74deg tip angle is experimentally found to yield 96.3% transmittance at 200 nm offset distance. 1 times 2 mechanical switch using the aforementioned silicon nanowire waveguide geometry is designed and fabricated. Studied results are useful for realizing low-loss microelectromechanically-actuated connections in silicon subwavelength integrated optical circuits in the telecommunication field.
DOI 10.1109/SENSOR.2009.5285372
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Connection characteristics of silicon nanowire waveguides and fabrication of physical contact switches

Author Bulgan, Erdal, Kanamori, Y., Hane, K.
Publication Date 2010
Publication Place - IEEE
Subject Nanowire waveguide, Optical connection, Silicon waveguide, Optical switch, Physical contact
Type Document
Language English
Digital Yes
Manuscript No
Library Özyeğin University
Library Asset ID 978-1-4244-4193-8
Record ID 9de525e2-564a-4e32-aef9-96ab67471800
Library Location Mechanical Engineering
Date 2010
Notes Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Sample Text Optical characteristics of silicon nanowire waveguide connections are studied both theoretically and experimentally. Effects of geometrical sizes and positional alignments on optical performance are investigated. Results show that waveguide connections with tips wider than 500 nm and tip angles greater than critical angle enable high transmittance and less sensitivity to positional misalignments. Connection with 1.5 mum-wide tip at 74deg tip angle is experimentally found to yield 96.3% transmittance at 200 nm offset distance. 1 times 2 mechanical switch using the aforementioned silicon nanowire waveguide geometry is designed and fabricated. Studied results are useful for realizing low-loss microelectromechanically-actuated connections in silicon subwavelength integrated optical circuits in the telecommunication field.
DOI 10.1109/SENSOR.2009.5285372
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