Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method

Name: Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method
Author: Maryam Nayeri ; Hamed Taheri ; Fatemeh Ostovari

İsim	Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method
Yazar	Maryam Nayeri ; Hamed Taheri ; Fatemeh Ostovari
Basım Tarihi:	1379-01
Konu	cvd method, monolayer, raman spectroscopy, ws2
Tür	Süreli Yayın
Dil	Farsça
Dijital	Evet
Yazma	Hayır
Kütüphane:	Toronto Üniversitesi
Demirbaş Numarası	ISSN: 2008-4854, EISSN: 2783-2538, DOI: 10.22075/jme.2023.28234.2327
Kayıt Numarası	cdi_doaj_primary_oai_doaj_org_article_69ece8aa234546d5920a89560fd27e5f
Lokasyon	DOAJ Directory of Open Access Journals
Tarih	1379-01
Notlar	Monolayer WS2 offers great promise for use in optical devices due to its direct bandgap and high photoluminescence intensity. In this way, large-area and high-quality materials are essential for the implementation of technological applications. In this research, we Synthesize the WS2 monolayer under controlled temperature conditions and characterize the films using Fourier-transform infrared spectroscopy (FTIR), Raman, x-ray photoelectron spectroscopies, and scanning electron microscope (SEM). The results show that with the introduction of argon gas as a carrier, the quality of the layer improves, and the growth level of WS2 increases, and as a result, the films show an average coating thickness of 43 nm. By controlling the growth temperature and timely entry of argon-carrying gas, the WO3 precursor is more effectively reduced and the oxidative etching of the synthesized monolayers is protected. The addition of hydrogen more effectively reduces the WO3 precursor and protects against oxidative etching of the synthesized monolayers. The obtained results indicate the complete synthesis of a two-dimensional structure (2D) of a single layer with sheets consisting of a crystal size of about 26 nm with a thickness of about 43 nm.
Erişim bilgileri	Access content in Directory of Open Access Journals, Available Online

Kaynağa git Toronto Üniversitesi University of Toronto

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Toronto Üniversitesi

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Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method

Yazar Maryam Nayeri ; Hamed Taheri ; Fatemeh Ostovari

Basım Tarihi 1379-01

Konu cvd method, monolayer, raman spectroscopy, ws2

Tür Süreli Yayın

Dil Farsça

Dijital Evet

Yazma Hayır

Kütüphane Toronto Üniversitesi

Demirbaş Numarası ISSN: 2008-4854, EISSN: 2783-2538, DOI: 10.22075/jme.2023.28234.2327

Kayıt Numarası cdi_doaj_primary_oai_doaj_org_article_69ece8aa234546d5920a89560fd27e5f

Lokasyon DOAJ Directory of Open Access Journals

Tarih 1379-01

Notlar Monolayer WS2 offers great promise for use in optical devices due to its direct bandgap and high photoluminescence intensity. In this way, large-area and high-quality materials are essential for the implementation of technological applications. In this research, we Synthesize the WS2 monolayer under controlled temperature conditions and characterize the films using Fourier-transform infrared spectroscopy (FTIR), Raman, x-ray photoelectron spectroscopies, and scanning electron microscope (SEM). The results show that with the introduction of argon gas as a carrier, the quality of the layer improves, and the growth level of WS2 increases, and as a result, the films show an average coating thickness of 43 nm. By controlling the growth temperature and timely entry of argon-carrying gas, the WO3 precursor is more effectively reduced and the oxidative etching of the synthesized monolayers is protected. The addition of hydrogen more effectively reduces the WO3 precursor and protects against oxidative etching of the synthesized monolayers. The obtained results indicate the complete synthesis of a two-dimensional structure (2D) of a single layer with sheets consisting of a crystal size of about 26 nm with a thickness of about 43 nm.

Erişim bilgileri Access content in Directory of Open Access Journals, Available Online