A comparative study on the junction temperature measurements of LEDs with raman spectroscopy, microinfrared (IR) imaging, and Forward voltage methods

Name: A comparative study on the junction temperature measurements of LEDs with raman spectroscopy, microinfrared (IR) imaging, and Forward voltage methods
Author: Tamdoğan, Enes, Pavlidis, G., Graham, S., Arık, Mehmet

İsim	A comparative study on the junction temperature measurements of LEDs with raman spectroscopy, microinfrared (IR) imaging, and Forward voltage methods
Yazar	Tamdoğan, Enes, Pavlidis, G., Graham, S., Arık, Mehmet
Basım Tarihi:	2018-11
Basım Yeri	- IEEE
Konu	Forward voltage, Infrared (IR) imaging, Light-emitting diode (LED) junction temperature measurement, Phosphor coating, Raman spectroscopy, RGB
Tür	Süreli Yayın
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	2156-3950
Kayıt Numarası	89eaa269-a992-48dd-921d-0dfe20a70d5d
Lokasyon	Mechanical Engineering
Tarih	2018-11
Notlar	EU FP7 Career Integration ; Istanbul Development Agency
Örnek Metin	Energy efficiency, long life, exceptional color, and performance of solid-state light sources have resulted in a rapidly increasing trend in a number of practical applications especially for general lighting after a long history of incandescent lamps. Besides, light-emitting diodes (LEDs) have thermal limitations that are vital for device quality and lifetime. Specifically, to improve the heat dissipation, one major parameter used to evaluate the LED performance is thermal resistance (R). Reducing the resistance can improve the heat flow from the p-n junction to ambient during operation. To quantify this parameter, the LED junction temperature (TJ) must be determined. In this paper, the junction temperatures are first measured with forward voltage method (FVM), Raman spectroscopy, and infrared (IR) imaging for a 465-nm bare blue LED chip (without any phosphor coating). Then, the same samples have been coated with a phosphor-particles added epoxy mixture (%13, 4300 CCT) to convert blue to white light, and the junction temperatures were measured again experimentally with the previously mentioned three methods and compared to each other. While IR imaging shows better capability on capturing the possible hotspots over the surface, Raman method and FVM were in reasonably good agreement on measuring the junction temperature for 465-nm blue (uncoated) LED chip. However, the measurements performed after coating have shown slightly different results with IR imaging and Raman methods, while FVM has shown consistent results for coated chips.
DOI	10.1109/TCPMT.2018.2799488
Cilt	8

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A comparative study on the junction temperature measurements of LEDs with raman spectroscopy, microinfrared (IR) imaging, and Forward voltage methods

Yazar Tamdoğan, Enes, Pavlidis, G., Graham, S., Arık, Mehmet

Basım Tarihi 2018-11

Basım Yeri - IEEE

Konu Forward voltage, Infrared (IR) imaging, Light-emitting diode (LED) junction temperature measurement, Phosphor coating, Raman spectroscopy, RGB

Tür Süreli Yayın

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 2156-3950

Kayıt Numarası 89eaa269-a992-48dd-921d-0dfe20a70d5d

Lokasyon Mechanical Engineering

Tarih 2018-11

Notlar EU FP7 Career Integration ; Istanbul Development Agency

Örnek Metin Energy efficiency, long life, exceptional color, and performance of solid-state light sources have resulted in a rapidly increasing trend in a number of practical applications especially for general lighting after a long history of incandescent lamps. Besides, light-emitting diodes (LEDs) have thermal limitations that are vital for device quality and lifetime. Specifically, to improve the heat dissipation, one major parameter used to evaluate the LED performance is thermal resistance (R). Reducing the resistance can improve the heat flow from the p-n junction to ambient during operation. To quantify this parameter, the LED junction temperature (TJ) must be determined. In this paper, the junction temperatures are first measured with forward voltage method (FVM), Raman spectroscopy, and infrared (IR) imaging for a 465-nm bare blue LED chip (without any phosphor coating). Then, the same samples have been coated with a phosphor-particles added epoxy mixture (%13, 4300 CCT) to convert blue to white light, and the junction temperatures were measured again experimentally with the previously mentioned three methods and compared to each other. While IR imaging shows better capability on capturing the possible hotspots over the surface, Raman method and FVM were in reasonably good agreement on measuring the junction temperature for 465-nm blue (uncoated) LED chip. However, the measurements performed after coating have shown slightly different results with IR imaging and Raman methods, while FVM has shown consistent results for coated chips.

DOI 10.1109/TCPMT.2018.2799488

Cilt 8