Hydrogenated carbon monolayer in biphenylene network offers a potential paradigm for nanoelectronic devices

Name: Hydrogenated carbon monolayer in biphenylene network offers a potential paradigm for nanoelectronic devices
Author: Demirci, S., Gorkan, T., Çallloǧlu, Ş., Özçelik, Veli Ongun, Barth, J. V., Aktürk, E., Ciraci, S.

İsim	Hydrogenated carbon monolayer in biphenylene network offers a potential paradigm for nanoelectronic devices
Yazar	Demirci, S., Gorkan, T., Çallloǧlu, Ş., Özçelik, Veli Ongun, Barth, J. V., Aktürk, E., Ciraci, S.
Basım Tarihi:	2022-09-15
Basım Yeri	- American Chemical Society
Tür	Süreli Yayın
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	1932-7447
Kayıt Numarası	1f0e1799-90a0-46eb-ae47-61aeef764c2a
Lokasyon	Natural and Mathematical Sciences
Tarih	2022-09-15
Notlar	Academy of Science of Turkey ; High Performance and Grid Computing Center ; National Center for High-Performance Computing of Turkey ; TUBITAK ULAKBIM ; Alexander von Humboldt-Stiftung , Ulusal Yüksek Başarımlı Hesaplama Merkezi, Istanbul Teknik Üniversitesi ; Kırıkkale Üniversitesi ; Bilim Akademisi ; TÜBİTAK ; Leibniz-Rechenzentrum
Örnek Metin	A metallic carbon monolayer in the biphenylene network (specified as C ohs) becomes an insulator upon hydrogenation (specified as CH ohs). Patterned dehydrogenation of this CH ohs can offer a variety of intriguing functionalities. Composite structures constituted by alternating stripes of C and CH ohs with different repeat periodicity and chirality display topological properties and can form heterostructures with a tunable band-lineup or Schottky barrier height. Alternating arrangements of these stripes of finite size enable one to also construct double barrier resonant tunneling structures and 2D, lateral nanocapacitors with high gravimetric capacitance for an efficient energy storage device. By controlled removal of H atom from a specific site or dehydrogenation of an extended zone, one can achieve antidoping or construct 0D quantum structures like antidots, antirings/loops, and supercrystals, the energy level spacing of which can be controlled with their geometry and size for optoelectronic applications. Conversely, all these device functions can be acquired also by controlled hydrogenation of a bare C ohs monolayer. Since all these processes are applied to a monolayer, the commensurability of electronically different materials is assured. These features pertain not only to CH ohs but also to fully hydrogenated Si ohs.
DOI	10.1021/acs.jpcc.2c04453
Cilt	126

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Hydrogenated carbon monolayer in biphenylene network offers a potential paradigm for nanoelectronic devices

Yazar Demirci, S., Gorkan, T., Çallloǧlu, Ş., Özçelik, Veli Ongun, Barth, J. V., Aktürk, E., Ciraci, S.

Basım Tarihi 2022-09-15

Basım Yeri - American Chemical Society

Tür Süreli Yayın

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 1932-7447

Kayıt Numarası 1f0e1799-90a0-46eb-ae47-61aeef764c2a

Lokasyon Natural and Mathematical Sciences

Tarih 2022-09-15

Notlar Academy of Science of Turkey ; High Performance and Grid Computing Center ; National Center for High-Performance Computing of Turkey ; TUBITAK ULAKBIM ; Alexander von Humboldt-Stiftung , Ulusal Yüksek Başarımlı Hesaplama Merkezi, Istanbul Teknik Üniversitesi ; Kırıkkale Üniversitesi ; Bilim Akademisi ; TÜBİTAK ; Leibniz-Rechenzentrum

Örnek Metin A metallic carbon monolayer in the biphenylene network (specified as C ohs) becomes an insulator upon hydrogenation (specified as CH ohs). Patterned dehydrogenation of this CH ohs can offer a variety of intriguing functionalities. Composite structures constituted by alternating stripes of C and CH ohs with different repeat periodicity and chirality display topological properties and can form heterostructures with a tunable band-lineup or Schottky barrier height. Alternating arrangements of these stripes of finite size enable one to also construct double barrier resonant tunneling structures and 2D, lateral nanocapacitors with high gravimetric capacitance for an efficient energy storage device. By controlled removal of H atom from a specific site or dehydrogenation of an extended zone, one can achieve antidoping or construct 0D quantum structures like antidots, antirings/loops, and supercrystals, the energy level spacing of which can be controlled with their geometry and size for optoelectronic applications. Conversely, all these device functions can be acquired also by controlled hydrogenation of a bare C ohs monolayer. Since all these processes are applied to a monolayer, the commensurability of electronically different materials is assured. These features pertain not only to CH ohs but also to fully hydrogenated Si ohs.

DOI 10.1021/acs.jpcc.2c04453

Cilt 126