A fundamental approach to electrochemical analyses on chemically modified thin films for barrier CMP optimization

Name: A fundamental approach to electrochemical analyses on chemically modified thin films for barrier CMP optimization
Author: Yagan, Rawana, Başım, Gül Bahar

İsim	A fundamental approach to electrochemical analyses on chemically modified thin films for barrier CMP optimization
Yazar	Yagan, Rawana, Başım, Gül Bahar
Basım Tarihi:	2019-04-09
Basım Yeri	- IOP Publishing
Tür	Süreli Yayın
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	2162-8769
Kayıt Numarası	8d2bd645-3275-46da-80c9-8e485f095889
Lokasyon	Mechanical Engineering
Tarih	2019-04-09
Örnek Metin	Chemical Mechanical Planarization (CMP) process development for 10nm nodes and beyond demands a systematic understanding of atomic-scale chemical and mechanical surface interactions for the control of material removal, selectivity, and defectivity. Particularly the CMP of barrier/liner films is challenging with new materials introduced to better adhere the contact metal at the interface and limit the probability of metal diffusion to the transistors. The relative selectivity of the CMP removal rates of the barrier materials against the contact metal needs to be controlled depending on the integration scheme. This paper focuses on understanding the barrier CMP process selectivity on the model W/Ti/TiN applications through electrochemical evaluations and chemically modified thin film analyses. Ex-situ electrochemical evaluations are conducted on the W/Ti/TiN system to evaluate the passivation rates in various slurry formulations as a function of the slurry chemistry and the abrasive particle solids loading. Results of the passivation rates are compared to the removal rate selectivity and the post CMP surface quality on blanked W, Ti, and TiN films. A new methodology for CMP slurry formulations through ex-situ electrochemical analyses is outlined for new and more challenging barrier films while simultaneously highlighting an approach for corrosion prevention on the metallic layers.
DOI	10.1149/2.0181905jss
Cilt	8

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A fundamental approach to electrochemical analyses on chemically modified thin films for barrier CMP optimization

Yazar Yagan, Rawana, Başım, Gül Bahar

Basım Tarihi 2019-04-09

Basım Yeri - IOP Publishing

Tür Süreli Yayın

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 2162-8769

Kayıt Numarası 8d2bd645-3275-46da-80c9-8e485f095889

Lokasyon Mechanical Engineering

Tarih 2019-04-09

Örnek Metin Chemical Mechanical Planarization (CMP) process development for 10nm nodes and beyond demands a systematic understanding of atomic-scale chemical and mechanical surface interactions for the control of material removal, selectivity, and defectivity. Particularly the CMP of barrier/liner films is challenging with new materials introduced to better adhere the contact metal at the interface and limit the probability of metal diffusion to the transistors. The relative selectivity of the CMP removal rates of the barrier materials against the contact metal needs to be controlled depending on the integration scheme. This paper focuses on understanding the barrier CMP process selectivity on the model W/Ti/TiN applications through electrochemical evaluations and chemically modified thin film analyses. Ex-situ electrochemical evaluations are conducted on the W/Ti/TiN system to evaluate the passivation rates in various slurry formulations as a function of the slurry chemistry and the abrasive particle solids loading. Results of the passivation rates are compared to the removal rate selectivity and the post CMP surface quality on blanked W, Ti, and TiN films. A new methodology for CMP slurry formulations through ex-situ electrochemical analyses is outlined for new and more challenging barrier films while simultaneously highlighting an approach for corrosion prevention on the metallic layers.

DOI 10.1149/2.0181905jss

Cilt 8