An MMIC low-noise amplifier design technique

Name: An MMIC low-noise amplifier design technique
Author: Varonen, M., Reeves, R., Kangaslahti, P., Samoska, L., Kooi, J. W., Cleary, K., Gawande, R. S., Akgiray, Ahmed Halid, Fung, A., Gaier, T., Weinreb, S., Readhead, A. C. S., Lawrence, C., Sarkozy, S., Lai, R.

İsim	An MMIC low-noise amplifier design technique
Yazar	Varonen, M., Reeves, R., Kangaslahti, P., Samoska, L., Kooi, J. W., Cleary, K., Gawande, R. S., Akgiray, Ahmed Halid, Fung, A., Gaier, T., Weinreb, S., Readhead, A. C. S., Lawrence, C., Sarkozy, S., Lai, R.
Basım Tarihi:	2016-03
Basım Yeri	- IEEE
Konu	Cryogenic, InP HEMT, Low-noise amplifiers (LNAs), Monolithic microwave integrated circuit (MMIC)
Tür	Süreli Yayın
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	1557-9670
Kayıt Numarası	81f77d09-08b8-47bd-9fea-baeebbf57576
Lokasyon	Electrical & Electronics Engineering
Tarih	2016-03
Notlar	Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Örnek Metin	In this paper we discuss the design of low-noise amplifiers (LNAs) for both cryogenic and room-temperature operation in general and take the stability and linearity of the amplifiers into special consideration. Oscillations that can occur within a multi-finger transistor are studied and verified with simulations and measurements. To overcome the stability problem related to the multi-finger transistor design approach a parallel two-finger unit transistor monolithic microwave integrated circuit LNA design technique, which enables the design of wideband and high-linearity LNAs with very stable, predictable, and repeatable operation, is proposed. The feasibility of the proposed design technique is proved by demonstrating a three-stage LNA packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology that achieves more than a 20-dB gain from 75 to 116 GHz and 26-33-K noise temperature from 85 to 116 GHz when cryogenically cooled to 27 K.
DOI	10.1109/TMTT.2016.2521650
Cilt	64

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An MMIC low-noise amplifier design technique

Yazar Varonen, M., Reeves, R., Kangaslahti, P., Samoska, L., Kooi, J. W., Cleary, K., Gawande, R. S., Akgiray, Ahmed Halid, Fung, A., Gaier, T., Weinreb, S., Readhead, A. C. S., Lawrence, C., Sarkozy, S., Lai, R.

Basım Tarihi 2016-03

Basım Yeri - IEEE

Konu Cryogenic, InP HEMT, Low-noise amplifiers (LNAs), Monolithic microwave integrated circuit (MMIC)

Tür Süreli Yayın

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 1557-9670

Kayıt Numarası 81f77d09-08b8-47bd-9fea-baeebbf57576

Lokasyon Electrical & Electronics Engineering

Tarih 2016-03

Notlar Due to copyright restrictions, the access to the full text of this article is only available via subscription.

Örnek Metin In this paper we discuss the design of low-noise amplifiers (LNAs) for both cryogenic and room-temperature operation in general and take the stability and linearity of the amplifiers into special consideration. Oscillations that can occur within a multi-finger transistor are studied and verified with simulations and measurements. To overcome the stability problem related to the multi-finger transistor design approach a parallel two-finger unit transistor monolithic microwave integrated circuit LNA design technique, which enables the design of wideband and high-linearity LNAs with very stable, predictable, and repeatable operation, is proposed. The feasibility of the proposed design technique is proved by demonstrating a three-stage LNA packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology that achieves more than a 20-dB gain from 75 to 116 GHz and 26-33-K noise temperature from 85 to 116 GHz when cryogenically cooled to 27 K.

DOI 10.1109/TMTT.2016.2521650

Cilt 64