Controlling germanium CMP selectivity through slurry mediation by surface active agents

Name: Controlling germanium CMP selectivity through slurry mediation by surface active agents
Author: Karagöz, Ayşe, Başım, Gül Bahar

İsim	Controlling germanium CMP selectivity through slurry mediation by surface active agents
Yazar	Karagöz, Ayşe, Başım, Gül Bahar
Basım Tarihi:	2015-08-10
Basım Yeri	- The Electrochemical Society
Konu	Chemical mechanical planarization, Germanium/silica selectivity, Shallow trench isolation, Surface active agents
Tür	Süreli Yayın
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	2162-8769
Kayıt Numarası	a5ee6035-ac1b-49ca-bcd4-9550952cecb5
Lokasyon	Mechanical Engineering
Tarih	2015-08-10
Notlar	Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Örnek Metin	New developments and device performance requirements in microelectronics industry add to the challenges in chemical mechanical planarization (CMP) process. One of the recently introduced materials to semiconductor manufacturing is germanium which enables improved device performance through better channel mobility in shallow trench isolation (STI) applications for advanced circuits. This paper focuses on controlling germanium/silica selectivity for advanced STI CMP applications through slurry modification by surface active agents. Surface adsorption characteristics of cationic and anionic surfactants on germanium and silica wafers are analyzed in order to control selectivity as well as the defectivity performance of the CMP applications. The effects of surfactant charge and concentration (up to self-assembly) are studied in terms of slurry stability, material removal rates and surface defectivity. Surface charge manipulation by the surfactant adsorption on the germanium surface is presented as the main criteria on the selection of the proper surfactant/oxidizer systems for CMP. The outlined correlations are systematically presented to highlight slurry modification criteria for the desired selectivity results. Consequently, the paper evaluates the slurry selectivity control and improvement criteria for the new materials introduced to microelectronics applications with CMP requirement by evaluating the germanium silica system as a model application.
DOI	10.1149/2.0151511jss
Cilt	4

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Controlling germanium CMP selectivity through slurry mediation by surface active agents

Yazar Karagöz, Ayşe, Başım, Gül Bahar

Basım Tarihi 2015-08-10

Basım Yeri - The Electrochemical Society

Konu Chemical mechanical planarization, Germanium/silica selectivity, Shallow trench isolation, Surface active agents

Tür Süreli Yayın

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 2162-8769

Kayıt Numarası a5ee6035-ac1b-49ca-bcd4-9550952cecb5

Lokasyon Mechanical Engineering

Tarih 2015-08-10

Notlar Due to copyright restrictions, the access to the full text of this article is only available via subscription.

Örnek Metin New developments and device performance requirements in microelectronics industry add to the challenges in chemical mechanical planarization (CMP) process. One of the recently introduced materials to semiconductor manufacturing is germanium which enables improved device performance through better channel mobility in shallow trench isolation (STI) applications for advanced circuits. This paper focuses on controlling germanium/silica selectivity for advanced STI CMP applications through slurry modification by surface active agents. Surface adsorption characteristics of cationic and anionic surfactants on germanium and silica wafers are analyzed in order to control selectivity as well as the defectivity performance of the CMP applications. The effects of surfactant charge and concentration (up to self-assembly) are studied in terms of slurry stability, material removal rates and surface defectivity. Surface charge manipulation by the surfactant adsorption on the germanium surface is presented as the main criteria on the selection of the proper surfactant/oxidizer systems for CMP. The outlined correlations are systematically presented to highlight slurry modification criteria for the desired selectivity results. Consequently, the paper evaluates the slurry selectivity control and improvement criteria for the new materials introduced to microelectronics applications with CMP requirement by evaluating the germanium silica system as a model application.

DOI 10.1149/2.0151511jss

Cilt 4