Metal oxide thin film characterization for new generation chemical mechanical planarization development

Name: Metal oxide thin film characterization for new generation chemical mechanical planarization development
Author: Başım, Gül Bahar, Karagöz, Ayşe

İsim	Metal oxide thin film characterization for new generation chemical mechanical planarization development
Yazar	Başım, Gül Bahar, Karagöz, Ayşe
Basım Tarihi:	2016
Basım Yeri	- The Electrochemical Society
Konu	Characterization, Chemical mechanical polishing, Dielectric materials, Metallic compounds, Metals, Microelectronics, Oxide films, Semiconductor device manufacture, Semiconductor devices, Semiconductor materials
Tür	Süreli Yayın
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	1938-5862
Kayıt Numarası	7d6a6dbc-1c36-44f6-b2df-e34f0cc51ead
Lokasyon	Mechanical Engineering
Tarih	2016
Örnek Metin	This study targets to create a basis for the process development in the new generation semiconductor industry dealing with atomic scale devices. We focus on the CMP process development as it is used for the current and future semiconductor materials in microelectronics industry for metallic, semiconductor and dielectric materials. Particularly, formation and atomic level removal mechanisms of the CMP induced metal oxide thin films for metallic layers and chemically modified hydrated layer interaction for the semiconductor films are presented as a focus for the new generation device manufacturing.
DOI	10.1149/07203.0067ecst

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Metal oxide thin film characterization for new generation chemical mechanical planarization development

Yazar Başım, Gül Bahar, Karagöz, Ayşe

Basım Tarihi 2016

Basım Yeri - The Electrochemical Society

Konu Characterization, Chemical mechanical polishing, Dielectric materials, Metallic compounds, Metals, Microelectronics, Oxide films, Semiconductor device manufacture, Semiconductor devices, Semiconductor materials

Tür Süreli Yayın

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 1938-5862

Kayıt Numarası 7d6a6dbc-1c36-44f6-b2df-e34f0cc51ead

Lokasyon Mechanical Engineering

Tarih 2016

Örnek Metin This study targets to create a basis for the process development in the new generation semiconductor industry dealing with atomic scale devices. We focus on the CMP process development as it is used for the current and future semiconductor materials in microelectronics industry for metallic, semiconductor and dielectric materials. Particularly, formation and atomic level removal mechanisms of the CMP induced metal oxide thin films for metallic layers and chemically modified hydrated layer interaction for the semiconductor films are presented as a focus for the new generation device manufacturing.

DOI 10.1149/07203.0067ecst