Tunable near-field radiative transfer by III–V group compound semiconductors

Name: Tunable near-field radiative transfer by III–V group compound semiconductors
Author: Elçioğlu, E. B., Didari, Azadeh, Özyurt, T. O., Mengüç, Mustafa Pınar

İsim	Tunable near-field radiative transfer by III–V group compound semiconductors
Yazar	Elçioğlu, E. B., Didari, Azadeh, Özyurt, T. O., Mengüç, Mustafa Pınar
Basım Tarihi:	2019-03-06
Basım Yeri	- IOP Publishing
Konu	Near-field thermal radiation, Energy harvesting, Wafer material, Doping
Tür	Süreli Yayın
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	0022-3727
Kayıt Numarası	ff65a97b-96ff-4109-97f1-38482657707c
Lokasyon	Mechanical Engineering
Tarih	2019-03-06
Notlar	TÜBİTAK ; Center for Energy, Environment and Economy (CEEE) at Ozyegin University, Istanbul, Turkey
Örnek Metin	Near-field radiative transfer (NFRT) refers to the energy transfer mechanism which takes place between media separated by distances comparable to or much smaller than the dominant wavelength of emission. NFRT is due to the contribution of evanescent waves and coherent nature of the energy transfer within nano-gaps, and can exceed Planck's blackbody limit. As researchers further investigate this phenomenon and start fabrication of custom-made platforms, advances in utilization of NFRT in energy harvesting applications move forward day by day. In designing and manufacturing such harvesting devices, chemical and physical properties of surfaces and wafers are important for development of effective solutions. In this work, we compare several III-V group compound semiconductor wafers (mainly GaAs, InSb, and InP) from fabrication point of view, in order to explore their possible use in future devices. The results presented here show that the type of dopant, wafer temperature, and gap size are very important factors as they affect the NFRT rates. GaAs, InSb, and InP wafers significantly enhance the near-field fluxes beyond the blackbody rates, and n-type InSb yields to the highest enhancement. For GaAs, p-type yielded a higher radiative flux compared to n-type GaAs, as oppose to n-type InSb outperforming its p-type and undoped counterparts. Furthermore, the possible use of n-InSb as the TPV cell at 550K is discussed for effective energy harvesting. These findings can be useful for determination of the proper material type for emitting and non-emitting NFRT-based energy harvesting devices.
DOI	10.1088/1361-6463/aaf947
Cilt	52

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Tunable near-field radiative transfer by III–V group compound semiconductors

Yazar Elçioğlu, E. B., Didari, Azadeh, Özyurt, T. O., Mengüç, Mustafa Pınar

Basım Tarihi 2019-03-06

Basım Yeri - IOP Publishing

Konu Near-field thermal radiation, Energy harvesting, Wafer material, Doping

Tür Süreli Yayın

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 0022-3727

Kayıt Numarası ff65a97b-96ff-4109-97f1-38482657707c

Lokasyon Mechanical Engineering

Tarih 2019-03-06

Notlar TÜBİTAK ; Center for Energy, Environment and Economy (CEEE) at Ozyegin University, Istanbul, Turkey

Örnek Metin Near-field radiative transfer (NFRT) refers to the energy transfer mechanism which takes place between media separated by distances comparable to or much smaller than the dominant wavelength of emission. NFRT is due to the contribution of evanescent waves and coherent nature of the energy transfer within nano-gaps, and can exceed Planck's blackbody limit. As researchers further investigate this phenomenon and start fabrication of custom-made platforms, advances in utilization of NFRT in energy harvesting applications move forward day by day. In designing and manufacturing such harvesting devices, chemical and physical properties of surfaces and wafers are important for development of effective solutions. In this work, we compare several III-V group compound semiconductor wafers (mainly GaAs, InSb, and InP) from fabrication point of view, in order to explore their possible use in future devices. The results presented here show that the type of dopant, wafer temperature, and gap size are very important factors as they affect the NFRT rates. GaAs, InSb, and InP wafers significantly enhance the near-field fluxes beyond the blackbody rates, and n-type InSb yields to the highest enhancement. For GaAs, p-type yielded a higher radiative flux compared to n-type GaAs, as oppose to n-type InSb outperforming its p-type and undoped counterparts. Furthermore, the possible use of n-InSb as the TPV cell at 550K is discussed for effective energy harvesting. These findings can be useful for determination of the proper material type for emitting and non-emitting NFRT-based energy harvesting devices.

DOI 10.1088/1361-6463/aaf947

Cilt 52