Impact of pad conditioning on thickness profile control in chemical mechanical planarization

Name: Impact of pad conditioning on thickness profile control in chemical mechanical planarization
Author: Kincal, S., Başım, Gül Bahar

İsim	Impact of pad conditioning on thickness profile control in chemical mechanical planarization
Yazar	Kincal, S., Başım, Gül Bahar
Basım Tarihi:	2013-01
Basım Yeri	- Springer Science+Business Media
Konu	Chemical mechanical planarization (CMP), Conditioning, Pad profile modeling, Defectivity
Tür	Süreli Yayın
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	1543-186X
Kayıt Numarası	47823b4c-f513-4e78-a1e9-c8d398686f27
Lokasyon	Mechanical Engineering
Tarih	2013-01
Notlar	Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Örnek Metin	Chemical mechanical planarization (CMP) has been proven to be the best method to achieve within-wafer and within-die uniformity for multilevel metallization. Decreasing device dimensions and increasing wafer sizes continuously demand better planarization, which necessitates better understanding of all the variables of the CMP process. A recently highlighted critical factor, pad conditioning, affects the pad surface profile and consequently the wafer profile; in addition, it reduces defects by refreshing the pad surface during polishing. This work demonstrates the changes in the postpolish wafer profile as a function of pad wear. It also introduces a wafer material removal rate profile model based on the locally relevant Preston equation by estimating the pad thickness profile as a function of polishing time. The result is a dynamic predictor of how the wafer removal rate profile shifts as the pad ages. The model helps fine-tune the pad conditioner operating characteristics without the requirement for costly and lengthy experiments. The accuracy of the model is demonstrated by experiments as well as data from a real production line. Both experimental data and simulations indicate that the smaller conditioning disk size and extended conditioning sweep range help improve the post-CMP wafer planarization. However, the defectivity tends to increase when the conditioning disk sweeps out of the pad radius; hence, the pad conditioning needs to be designed by considering the specific requirements of the CMP process conducted. The presented model predicts the process outcomes without requiring detailed experimentation.
DOI	10.1007/s11664-012-2250-z
Cilt	42

Kaynağa git Özyeğin Üniversitesi

Aramaya Dön

Özyeğin Üniversitesi

Kaynağa git

Impact of pad conditioning on thickness profile control in chemical mechanical planarization

Yazar Kincal, S., Başım, Gül Bahar

Basım Tarihi 2013-01

Basım Yeri - Springer Science+Business Media

Konu Chemical mechanical planarization (CMP), Conditioning, Pad profile modeling, Defectivity

Tür Süreli Yayın

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 1543-186X

Kayıt Numarası 47823b4c-f513-4e78-a1e9-c8d398686f27

Lokasyon Mechanical Engineering

Tarih 2013-01

Notlar Due to copyright restrictions, the access to the full text of this article is only available via subscription.

Örnek Metin Chemical mechanical planarization (CMP) has been proven to be the best method to achieve within-wafer and within-die uniformity for multilevel metallization. Decreasing device dimensions and increasing wafer sizes continuously demand better planarization, which necessitates better understanding of all the variables of the CMP process. A recently highlighted critical factor, pad conditioning, affects the pad surface profile and consequently the wafer profile; in addition, it reduces defects by refreshing the pad surface during polishing. This work demonstrates the changes in the postpolish wafer profile as a function of pad wear. It also introduces a wafer material removal rate profile model based on the locally relevant Preston equation by estimating the pad thickness profile as a function of polishing time. The result is a dynamic predictor of how the wafer removal rate profile shifts as the pad ages. The model helps fine-tune the pad conditioner operating characteristics without the requirement for costly and lengthy experiments. The accuracy of the model is demonstrated by experiments as well as data from a real production line. Both experimental data and simulations indicate that the smaller conditioning disk size and extended conditioning sweep range help improve the post-CMP wafer planarization. However, the defectivity tends to increase when the conditioning disk sweeps out of the pad radius; hence, the pad conditioning needs to be designed by considering the specific requirements of the CMP process conducted. The presented model predicts the process outcomes without requiring detailed experimentation.

DOI 10.1007/s11664-012-2250-z

Cilt 42