Characterization of nano-scale protective oxide films: application on metal chemical mechanical planarization

Name: Characterization of nano-scale protective oxide films: application on metal chemical mechanical planarization
Author: Karagöz, Ayşe, Craciun, V., Başım, Gül Bahar

İsim	Characterization of nano-scale protective oxide films: application on metal chemical mechanical planarization
Yazar	Karagöz, Ayşe, Craciun, V., Başım, Gül Bahar
Basım Tarihi:	2015
Basım Yeri	- The Electrochemical Society
Konu	Tungsten-oxide, Oxidation, Slurries
Tür	Süreli Yayın
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	2162-8769
Kayıt Numarası	91859e6b-6024-4ef2-9cc5-5d0d35901c9a
Lokasyon	Mechanical Engineering
Tarih	2015
Notlar	European Commission
Örnek Metin	This study focuses on the characterization of nano-scale metal oxide films for chemical mechanical planarization (CMP) applications. The protective nature of the self-grown metal oxide layers in the CMP slurry environment enable topographic selectivity required for metallization of interconnects. Tungsten was selected as the model metal film to study the formation and characteristics of the metal oxide nano-layers since tungsten CMP is very well-established in conventional semiconductor manufacturing. The tungsten oxide nano-films were characterized for thickness, density and surface topography in addition to evaluation of their protective nature by calculation of the Pilling-Bedworth (P-B) ratios. It was observed that in addition to controlling the self-protective characteristics, the oxidizer concentration also affects the surface structure of the metal oxide films resulting in significant changes in the CMP process performance in terms of material removal rates and surface finish with a sweet-spot detected at 0.075 M H2O2 concentration.
DOI	10.1149/2.0151412jss
Cilt	4

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Characterization of nano-scale protective oxide films: application on metal chemical mechanical planarization

Yazar Karagöz, Ayşe, Craciun, V., Başım, Gül Bahar

Basım Tarihi 2015

Basım Yeri - The Electrochemical Society

Konu Tungsten-oxide, Oxidation, Slurries

Tür Süreli Yayın

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 2162-8769

Kayıt Numarası 91859e6b-6024-4ef2-9cc5-5d0d35901c9a

Lokasyon Mechanical Engineering

Tarih 2015

Notlar European Commission

Örnek Metin This study focuses on the characterization of nano-scale metal oxide films for chemical mechanical planarization (CMP) applications. The protective nature of the self-grown metal oxide layers in the CMP slurry environment enable topographic selectivity required for metallization of interconnects. Tungsten was selected as the model metal film to study the formation and characteristics of the metal oxide nano-layers since tungsten CMP is very well-established in conventional semiconductor manufacturing. The tungsten oxide nano-films were characterized for thickness, density and surface topography in addition to evaluation of their protective nature by calculation of the Pilling-Bedworth (P-B) ratios. It was observed that in addition to controlling the self-protective characteristics, the oxidizer concentration also affects the surface structure of the metal oxide films resulting in significant changes in the CMP process performance in terms of material removal rates and surface finish with a sweet-spot detected at 0.075 M H2O2 concentration.

DOI 10.1149/2.0151412jss

Cilt 4