A coupled material removal model for chemical mechanical polishing processes

Name: A coupled material removal model for chemical mechanical polishing processes
Author: Akbar, Wazir, Ertunç, Özgür

İsim	A coupled material removal model for chemical mechanical polishing processes
Yazar	Akbar, Wazir, Ertunç, Özgür
Basım Tarihi:	2021-10-01
Basım Yeri	- IOP Publishing
Konu	Chemical mechanical polishing, Contact mechanics, Diffusion, Coupled material removal model, Nonlinear behavior of MRR
Tür	Süreli Yayın
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	2162-8769
Kayıt Numarası	cbc99ebb-b852-4aa1-a4e0-710fc913ad2a
Lokasyon	Mechanical Engineering
Tarih	2021-10-01
Örnek Metin	Chemical mechanical polishing (CMP) is a process used to obtain planarized surfaces in microelectronic device manufacturing. The planarization is achieved by material removal from the wafer surface by synergistic effect of chemical and mechanical actions. The material removal rate (MRR) in chemical mechanical processes have a linear dependency on applied down pressure. However, some experimental studies have reported nonlinear relationship between MRR and applied pressure. The nonlinearity can be attributed to complex interactions among the wafer, pad, abrasive particles, and chemical agents in the slurry. Therefore, in modelling CMP processes, coupling of both the chemical and mechanical actions is imperative to provide insight into the nonlinear behavior of MRR, because treating the chemical effects only as a mere means of softening the wafer surface fails to explain the nonlinear behavior of MRR in silicon dioxide CMP. Here, we present a model that couples micro-contact mechanics with diffusion of slurry into the wafer and predict MRR in CMP of silicon dioxide. The model is validated with experimental results available in the literature. Moreover, the developed model may be used to explain the nonlinear increase in MRR of silicon dioxide with increasing applied pressure.
DOI	10.1149/2162-8777/ac3057
Cilt	10

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A coupled material removal model for chemical mechanical polishing processes

Yazar Akbar, Wazir, Ertunç, Özgür

Basım Tarihi 2021-10-01

Basım Yeri - IOP Publishing

Konu Chemical mechanical polishing, Contact mechanics, Diffusion, Coupled material removal model, Nonlinear behavior of MRR

Tür Süreli Yayın

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 2162-8769

Kayıt Numarası cbc99ebb-b852-4aa1-a4e0-710fc913ad2a

Lokasyon Mechanical Engineering

Tarih 2021-10-01

Örnek Metin Chemical mechanical polishing (CMP) is a process used to obtain planarized surfaces in microelectronic device manufacturing. The planarization is achieved by material removal from the wafer surface by synergistic effect of chemical and mechanical actions. The material removal rate (MRR) in chemical mechanical processes have a linear dependency on applied down pressure. However, some experimental studies have reported nonlinear relationship between MRR and applied pressure. The nonlinearity can be attributed to complex interactions among the wafer, pad, abrasive particles, and chemical agents in the slurry. Therefore, in modelling CMP processes, coupling of both the chemical and mechanical actions is imperative to provide insight into the nonlinear behavior of MRR, because treating the chemical effects only as a mere means of softening the wafer surface fails to explain the nonlinear behavior of MRR in silicon dioxide CMP. Here, we present a model that couples micro-contact mechanics with diffusion of slurry into the wafer and predict MRR in CMP of silicon dioxide. The model is validated with experimental results available in the literature. Moreover, the developed model may be used to explain the nonlinear increase in MRR of silicon dioxide with increasing applied pressure.

DOI 10.1149/2162-8777/ac3057

Cilt 10