A Cahn-Hilliard modeling of metal oxide thin films for advanced CMP applications

Name: A Cahn-Hilliard modeling of metal oxide thin films for advanced CMP applications
Author: Karagöz, Ayşe, Şengül, Yasemin, Başım, Gül Bahar

İsim	A Cahn-Hilliard modeling of metal oxide thin films for advanced CMP applications
Yazar	Karagöz, Ayşe, Şengül, Yasemin, Başım, Gül Bahar
Basım Tarihi:	2014
Basım Yeri	- ECS
Konu	Spinodal decomposition, Phase-separation, Optimization
Tür	Süreli Yayın
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	1938-5862
Kayıt Numarası	bfbc0672-c0e8-4b76-9ec1-9c3522a2b741
Lokasyon	Natural and Mathematical Sciences, Mechanical Engineering
Tarih	2014
Notlar	Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Örnek Metin	Chemical mechanical planarization (CMP) process enables topographic selectivity through formation of a protective oxide thin film on the recessed locations of the deposited metal layer, while a continuous chemical oxidation reaction is followed by mechanical abrasion takes place on the protruding locations. This paper demonstrates a new approach to CMP process optimization in terms of analyzing the nano-scale surface topography of the protective metal oxide films and modeling their growth through a Cahn-Hilliard equation (CHE) approach as an alternative to classical nucleation theory. It is observed that the material removal rate mechanisms and the consequent planarization performance depend on the nature of nucleation of the metal oxide films, which is a function of the oxidizer concentration of the CMP slurry.
DOI	10.1149/06117.0015ecst

Kaynağa git Özyeğin Üniversitesi

Aramaya Dön

Özyeğin Üniversitesi

Kaynağa git

A Cahn-Hilliard modeling of metal oxide thin films for advanced CMP applications

Yazar Karagöz, Ayşe, Şengül, Yasemin, Başım, Gül Bahar

Basım Tarihi 2014

Basım Yeri - ECS

Konu Spinodal decomposition, Phase-separation, Optimization

Tür Süreli Yayın

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 1938-5862

Kayıt Numarası bfbc0672-c0e8-4b76-9ec1-9c3522a2b741

Lokasyon Natural and Mathematical Sciences, Mechanical Engineering

Tarih 2014

Notlar Due to copyright restrictions, the access to the full text of this article is only available via subscription.

Örnek Metin Chemical mechanical planarization (CMP) process enables topographic selectivity through formation of a protective oxide thin film on the recessed locations of the deposited metal layer, while a continuous chemical oxidation reaction is followed by mechanical abrasion takes place on the protruding locations. This paper demonstrates a new approach to CMP process optimization in terms of analyzing the nano-scale surface topography of the protective metal oxide films and modeling their growth through a Cahn-Hilliard equation (CHE) approach as an alternative to classical nucleation theory. It is observed that the material removal rate mechanisms and the consequent planarization performance depend on the nature of nucleation of the metal oxide films, which is a function of the oxidizer concentration of the CMP slurry.

DOI 10.1149/06117.0015ecst