Optimized process and tool design for gan chemical mechanical planarization

Name: Optimized process and tool design for gan chemical mechanical planarization
Author: Ozbek, S., Akbar, Wazir, Başım, Gül Bahar

İsim	Optimized process and tool design for gan chemical mechanical planarization
Yazar	Ozbek, S., Akbar, Wazir, Başım, Gül Bahar
Basım Tarihi:	2017-10-04
Basım Yeri	- The Electrochemical Society
Konu	CMP, GaN, Optimization
Tür	Süreli Yayın
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	2162-8769
Kayıt Numarası	e5294f41-6a9c-480f-86c7-ef4ea4a2091f
Lokasyon	Mechanical Engineering
Tarih	2017-10-04
Örnek Metin	In this paper, we present a systematic approach to the gallium nitride (GaN) chemical mechanical planarization (CMP) process through evaluating the effect of crystallographic orientation, slurry chemistry and process variables on the removal rate and surface quality responses. A new CMP process and a complementary tool set-up are introduced to enhance GaN material removal rates. The key process variables are studied to set them at an optimal level, while a new slurry feed methodology is introduced in addition to a new tool set up to enable high material removal rates and acceptable surface quality through close control of the process chemistry. It is shown that the optimized settings can significantly improve the material removal rates as compared to the literature findings while simultaneously enabling a more sustainable process and potential removal selectivity against silica.
DOI	10.1149/2.0201711jss
Cilt	6

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Optimized process and tool design for gan chemical mechanical planarization

Yazar Ozbek, S., Akbar, Wazir, Başım, Gül Bahar

Basım Tarihi 2017-10-04

Basım Yeri - The Electrochemical Society

Konu CMP, GaN, Optimization

Tür Süreli Yayın

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 2162-8769

Kayıt Numarası e5294f41-6a9c-480f-86c7-ef4ea4a2091f

Lokasyon Mechanical Engineering

Tarih 2017-10-04

Örnek Metin In this paper, we present a systematic approach to the gallium nitride (GaN) chemical mechanical planarization (CMP) process through evaluating the effect of crystallographic orientation, slurry chemistry and process variables on the removal rate and surface quality responses. A new CMP process and a complementary tool set-up are introduced to enhance GaN material removal rates. The key process variables are studied to set them at an optimal level, while a new slurry feed methodology is introduced in addition to a new tool set up to enable high material removal rates and acceptable surface quality through close control of the process chemistry. It is shown that the optimized settings can significantly improve the material removal rates as compared to the literature findings while simultaneously enabling a more sustainable process and potential removal selectivity against silica.

DOI 10.1149/2.0201711jss

Cilt 6