A Monte Carlo simulation for phonon transport within silicon structures at nanoscales with heat generation

Name: A Monte Carlo simulation for phonon transport within silicon structures at nanoscales with heat generation
Author: Wong, B. T., Francoeur, M., Mengüç, Mustafa Pınar

İsim	A Monte Carlo simulation for phonon transport within silicon structures at nanoscales with heat generation
Yazar	Wong, B. T., Francoeur, M., Mengüç, Mustafa Pınar
Basım Tarihi:	2011-04
Basım Yeri	- Elsevier
Konu	Monte Carlo, Phonon transport, Silicon thin film, Heat generation, Ballistic transport, Near-field thermal radiation, The Fourier law, Heat diffusion equation
Tür	Süreli Yayın
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	0017-9310
Kayıt Numarası	f4e73fa3-41ab-45aa-b89d-dd396ddbadcc
Lokasyon	Mechanical Engineering
Tarih	2011-04
Notlar	the Kentucky Science and Engineering Foundation ; European Commission
Örnek Metin	Nanoscale phonon transport within silicon structures subjected to internal heat generation was explored. A Monte Carlo simulation was used. The simulation procedures differed from the current existing methods in which phonons below a predefined “reference temperature” were not accounted to reduce memory storage and computational resources. Results indicated that the heat diffusion equation significantly underestimates temperature distribution at nanoscales in the presence of an external heat source. Discussions on temperature distribution inside silicon thin film when heated by a pulsed laser, an electron beam or due to near-field thermal radiation effects were also provided.
DOI	10.1016/j.ijheatmasstransfer.2010.10.039
Cilt	54

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A Monte Carlo simulation for phonon transport within silicon structures at nanoscales with heat generation

Yazar Wong, B. T., Francoeur, M., Mengüç, Mustafa Pınar

Basım Tarihi 2011-04

Basım Yeri - Elsevier

Konu Monte Carlo, Phonon transport, Silicon thin film, Heat generation, Ballistic transport, Near-field thermal radiation, The Fourier law, Heat diffusion equation

Tür Süreli Yayın

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 0017-9310

Kayıt Numarası f4e73fa3-41ab-45aa-b89d-dd396ddbadcc

Lokasyon Mechanical Engineering

Tarih 2011-04

Notlar the Kentucky Science and Engineering Foundation ; European Commission

Örnek Metin Nanoscale phonon transport within silicon structures subjected to internal heat generation was explored. A Monte Carlo simulation was used. The simulation procedures differed from the current existing methods in which phonons below a predefined “reference temperature” were not accounted to reduce memory storage and computational resources. Results indicated that the heat diffusion equation significantly underestimates temperature distribution at nanoscales in the presence of an external heat source. Discussions on temperature distribution inside silicon thin film when heated by a pulsed laser, an electron beam or due to near-field thermal radiation effects were also provided.

DOI 10.1016/j.ijheatmasstransfer.2010.10.039

Cilt 54