Metal oxide nano film characterization for CMP optimization

Name: Metal oxide nano film characterization for CMP optimization
Author: Başım, Gül Bahar, Karagöz, Ayşe, Özdemir, Zeynep

İsim	Metal oxide nano film characterization for CMP optimization
Yazar	Başım, Gül Bahar, Karagöz, Ayşe, Özdemir, Zeynep
Basım Tarihi:	2013
Basım Yeri	- ECS
Tür	Belge
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	978-1-60768-427-5
Kayıt Numarası	6e9c7e8a-b3f3-4661-b782-65ce21c3686b
Lokasyon	Mechanical Engineering
Tarih	2013
Notlar	Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Örnek Metin	This paper focuses on the planarization of metallic films in microelectronics manufacturing by CMP through investigation of metal oxide thin films forming as a result of the chemical component of the process. Tungsten planarization is discussed as a model to establish the role of metal oxide nano-films in achieving material removal through their formation characteristics during polishing. The findings indicate a protective oxide film formation on tungsten, which tends to nucleate at high concentrations of oxidizers and enables material removal through the interaction of nano-particles in the slurry with the surface oxide hillocks.
DOI	10.1149/05039.0003ecst
Cilt	50

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Metal oxide nano film characterization for CMP optimization

Yazar Başım, Gül Bahar, Karagöz, Ayşe, Özdemir, Zeynep

Basım Tarihi 2013

Basım Yeri - ECS

Tür Belge

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 978-1-60768-427-5

Kayıt Numarası 6e9c7e8a-b3f3-4661-b782-65ce21c3686b

Lokasyon Mechanical Engineering

Tarih 2013

Notlar Due to copyright restrictions, the access to the full text of this article is only available via subscription.

Örnek Metin This paper focuses on the planarization of metallic films in microelectronics manufacturing by CMP through investigation of metal oxide thin films forming as a result of the chemical component of the process. Tungsten planarization is discussed as a model to establish the role of metal oxide nano-films in achieving material removal through their formation characteristics during polishing. The findings indicate a protective oxide film formation on tungsten, which tends to nucleate at high concentrations of oxidizers and enables material removal through the interaction of nano-particles in the slurry with the surface oxide hillocks.

DOI 10.1149/05039.0003ecst

Cilt 50