Surface characterization driven CMP optimization for gallium nitride

Name: Surface characterization driven CMP optimization for gallium nitride
Author: Karagöz, Ayşe, Siebert, M., Leunissen, P., Başım, Gül Bahar

İsim	Surface characterization driven CMP optimization for gallium nitride
Yazar	Karagöz, Ayşe, Siebert, M., Leunissen, P., Başım, Gül Bahar
Basım Tarihi:	2016
Basım Yeri	- ECS
Konu	Chemical mechanical polishing
Tür	Belge
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	1938-5862
Kayıt Numarası	3a049b2e-f7ba-47f3-a460-1c22b897d758
Lokasyon	Mechanical Engineering
Tarih	2016
Örnek Metin	Gallium nitride is a hard and chemically inert material demoting high material removal rates in the chemical mechanical planarization (CMP) applications. This paper focuses on the optimization of the process conditions to enhance material removal rates while controlling surface defectivity for GaN CMP. Two different crystallographic orientations of the GaN are characterized and compared to a commercial 2” GaN wafer to optimize the CMP performance on the basis of the wafer crystallographic nature, surface charge and topography. Slurry pH, the type of polishing pad and applied conditioning were evaluated to increase material removal rates of GaN while minimizing defect formation and enhancing the selectivity against silica.
DOI	10.1149/07218.0055ecst
Cilt	72

Kaynağa git Özyeğin Üniversitesi

Aramaya Dön

Özyeğin Üniversitesi

Kaynağa git

Surface characterization driven CMP optimization for gallium nitride

Yazar Karagöz, Ayşe, Siebert, M., Leunissen, P., Başım, Gül Bahar

Basım Tarihi 2016

Basım Yeri - ECS

Konu Chemical mechanical polishing

Tür Belge

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 1938-5862

Kayıt Numarası 3a049b2e-f7ba-47f3-a460-1c22b897d758

Lokasyon Mechanical Engineering

Tarih 2016

Örnek Metin Gallium nitride is a hard and chemically inert material demoting high material removal rates in the chemical mechanical planarization (CMP) applications. This paper focuses on the optimization of the process conditions to enhance material removal rates while controlling surface defectivity for GaN CMP. Two different crystallographic orientations of the GaN are characterized and compared to a commercial 2” GaN wafer to optimize the CMP performance on the basis of the wafer crystallographic nature, surface charge and topography. Slurry pH, the type of polishing pad and applied conditioning were evaluated to increase material removal rates of GaN while minimizing defect formation and enhancing the selectivity against silica.

DOI 10.1149/07218.0055ecst

Cilt 72