Author
Karagöz, Ayşe, Siebert, M., Leunissen, P., Başım, Gül Bahar
Publication Date
2016
Publication Place
-
ECS
Subject
Chemical mechanical polishing
Type
Document
Language
English
Digital
Yes
Manuscript
No
Library
Özyeğin University
Library Asset ID
1938-5862
Record ID
3a049b2e-f7ba-47f3-a460-1c22b897d758
Library Location
Mechanical Engineering
Date
2016
Sample Text
Gallium nitride is a hard and chemically inert material demoting high material removal rates in the chemical mechanical planarization (CMP) applications. This paper focuses on the optimization of the process conditions to enhance material removal rates while controlling surface defectivity for GaN CMP. Two different crystallographic orientations of the GaN are characterized and compared to a commercial 2” GaN wafer to optimize the CMP performance on the basis of the wafer crystallographic nature, surface charge and topography. Slurry pH, the type of polishing pad and applied conditioning were evaluated to increase material removal rates of GaN while minimizing defect formation and enhancing the selectivity against silica.
DOI
10.1149/07218.0055ecst
Cilt
72
