Surfactant mediated slurry formulations for Ge CMP applications

Name: Surfactant mediated slurry formulations for Ge CMP applications
Author: Başım, Gül Bahar, Karagöz, Ayşe, Chen, L., Vakarelski, I.

İsim	Surfactant mediated slurry formulations for Ge CMP applications
Yazar	Başım, Gül Bahar, Karagöz, Ayşe, Chen, L., Vakarelski, I.
Basım Tarihi:	2013
Basım Yeri	- Cambridge University Press
Konu	CMP, Ge, Self-assembly
Tür	Belge
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	2-s2.0-84899822148
Kayıt Numarası	5e7a09a2-2404-42e5-8919-402e43521be1
Lokasyon	Mechanical Engineering
Tarih	2013
Notlar	Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Örnek Metin	In this study, slurry formulations in the presence of self-assembled surfactant structures were investigated for Ge/SiO2 CMP applications in the absence and presence of oxidizers. Both anionic (sodium dodecyl sulfate-SDS) and cationic (cetyl trimethyl ammonium bromide-C12TAB) micelles were used in the slurry formulations as a function of pH and oxidizer concentration. CMP performances of Ge and SiO2 wafers were evaluated in terms of material removal rates, selectivity and surface quality. The material removal rate responses were also assessed through AFM wear rate tests to obtain a faster response for preliminary analyses. The surfactant adsorption characteristics were studied through surface wettability responses of the Ge and SiO2 wafers through contact angle measurements. It was observed that the self-assembled surfactant structures can help obtain selectivity on the silica/germanium system at low concentrations of the oxidizer in the slurry.
DOI	10.1557/opl.2013.971
Cilt	1560

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Surfactant mediated slurry formulations for Ge CMP applications

Yazar Başım, Gül Bahar, Karagöz, Ayşe, Chen, L., Vakarelski, I.

Basım Tarihi 2013

Basım Yeri - Cambridge University Press

Konu CMP, Ge, Self-assembly

Tür Belge

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 2-s2.0-84899822148

Kayıt Numarası 5e7a09a2-2404-42e5-8919-402e43521be1

Lokasyon Mechanical Engineering

Tarih 2013

Notlar Due to copyright restrictions, the access to the full text of this article is only available via subscription.

Örnek Metin In this study, slurry formulations in the presence of self-assembled surfactant structures were investigated for Ge/SiO2 CMP applications in the absence and presence of oxidizers. Both anionic (sodium dodecyl sulfate-SDS) and cationic (cetyl trimethyl ammonium bromide-C12TAB) micelles were used in the slurry formulations as a function of pH and oxidizer concentration. CMP performances of Ge and SiO2 wafers were evaluated in terms of material removal rates, selectivity and surface quality. The material removal rate responses were also assessed through AFM wear rate tests to obtain a faster response for preliminary analyses. The surfactant adsorption characteristics were studied through surface wettability responses of the Ge and SiO2 wafers through contact angle measurements. It was observed that the self-assembled surfactant structures can help obtain selectivity on the silica/germanium system at low concentrations of the oxidizer in the slurry.

DOI 10.1557/opl.2013.971

Cilt 1560