Metal CMP optimization based on chemically formed thin film analysis

Name: Metal CMP optimization based on chemically formed thin film analysis
Author: Başım, Gül Bahar

İsim	Metal CMP optimization based on chemically formed thin film analysis
Yazar	Başım, Gül Bahar
Basım Tarihi:	2009
Basım Yeri	- The Electrochemical Society
Konu	Copper, Surfaces, Silica, Layer
Tür	Belge
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	978-1-60768-094-9
Kayıt Numarası	af20097b-dad1-4ec2-9fd0-d806deb43749
Lokasyon	Mechanical Engineering
Tarih	2009
Notlar	Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Örnek Metin	The conventional demands for development in semiconductor industry are changing as the Moore's Law is approaching to its limits. This paper demonstrates a theoretical optimization approach for the planarization of metal films by Chemical Mechanical Polishing (CMP) process. Optimal removal rate and a smooth surface finish post CMP can be achieved by the combined effect of the chemical and mechanical components of the process. Metal CMP necessitates a protective oxide film formation in the presence of surface active agents, corrosives, pH regulators etc' to achieve global planarization. Formation and mechanical properties of the chemically modified films determine the stresses develop in the film structure delineating the stability of the chemically altered films on the surface of the metal wafer. The balance between the stresses built in the film structure versus the mechanical actions provided during the process can be used to optimize the process variables and furthermore help define new planarization techniques for the next generation microelectronic device manufacturing which is expected to deal with atomic level structures.
DOI	10.1149/1.3203969
Cilt	25

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Metal CMP optimization based on chemically formed thin film analysis

Yazar Başım, Gül Bahar

Basım Tarihi 2009

Basım Yeri - The Electrochemical Society

Konu Copper, Surfaces, Silica, Layer

Tür Belge

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 978-1-60768-094-9

Kayıt Numarası af20097b-dad1-4ec2-9fd0-d806deb43749

Lokasyon Mechanical Engineering

Tarih 2009

Notlar Due to copyright restrictions, the access to the full text of this article is only available via subscription.

Örnek Metin The conventional demands for development in semiconductor industry are changing as the Moore's Law is approaching to its limits. This paper demonstrates a theoretical optimization approach for the planarization of metal films by Chemical Mechanical Polishing (CMP) process. Optimal removal rate and a smooth surface finish post CMP can be achieved by the combined effect of the chemical and mechanical components of the process. Metal CMP necessitates a protective oxide film formation in the presence of surface active agents, corrosives, pH regulators etc' to achieve global planarization. Formation and mechanical properties of the chemically modified films determine the stresses develop in the film structure delineating the stability of the chemically altered films on the surface of the metal wafer. The balance between the stresses built in the film structure versus the mechanical actions provided during the process can be used to optimize the process variables and furthermore help define new planarization techniques for the next generation microelectronic device manufacturing which is expected to deal with atomic level structures.

DOI 10.1149/1.3203969

Cilt 25