Broadband high power amplifier design using GaN HEMT technology

Name: Broadband high power amplifier design using GaN HEMT technology
Author: Turt, Doğancan, Akgiray, Ahmed Halid

İsim	Broadband high power amplifier design using GaN HEMT technology
Yazar	Turt, Doğancan, Akgiray, Ahmed Halid
Basım Tarihi:	2021
Basım Yeri	- IEEE
Konu	GaN HEMT, High efficiency, Power added efficiency (PAE), Power amplifier (PA), Wideband
Tür	Belge
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	978-166542816-3
Kayıt Numarası	71c61e51-34d0-47a1-8934-7494b1f4f1d9
Lokasyon	Electrical & Electronics Engineering
Tarih	2021
Notlar	Cree Inc.
Örnek Metin	This paper presents the design and measurements of a broadband GaN HEMT power amplifier intended for point-to-point radios, electronic warfare systems, and test and measurement applications. The proposed power amplifier is fabricated, and small/large-signal measurements are collected. Fabricated design is conducted for an input power of 26 dBm and obtained between 39.6 - 40.9 dBm output power. Power added efficiency (PAE) of 45.9 % to 61.4 % is reached over the band (0.5 - 2.5 GHz). In this study, Wolfspeed's CGH40010F transistor is used in CW mode. In order to decide optimum source and load impedances of the transistor, load- source-pull simulations are conducted. After load- source-pull simulations, proper source and load matching networks are established to obtain optimum output power and efficiency values over the band.
DOI	10.1109/ICRAMET53537.2021.9650475

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Broadband high power amplifier design using GaN HEMT technology

Yazar Turt, Doğancan, Akgiray, Ahmed Halid

Basım Tarihi 2021

Basım Yeri - IEEE

Konu GaN HEMT, High efficiency, Power added efficiency (PAE), Power amplifier (PA), Wideband

Tür Belge

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 978-166542816-3

Kayıt Numarası 71c61e51-34d0-47a1-8934-7494b1f4f1d9

Lokasyon Electrical & Electronics Engineering

Tarih 2021

Notlar Cree Inc.

Örnek Metin This paper presents the design and measurements of a broadband GaN HEMT power amplifier intended for point-to-point radios, electronic warfare systems, and test and measurement applications. The proposed power amplifier is fabricated, and small/large-signal measurements are collected. Fabricated design is conducted for an input power of 26 dBm and obtained between 39.6 - 40.9 dBm output power. Power added efficiency (PAE) of 45.9 % to 61.4 % is reached over the band (0.5 - 2.5 GHz). In this study, Wolfspeed's CGH40010F transistor is used in CW mode. In order to decide optimum source and load impedances of the transistor, load- source-pull simulations are conducted. After load- source-pull simulations, proper source and load matching networks are established to obtain optimum output power and efficiency values over the band.

DOI 10.1109/ICRAMET53537.2021.9650475