X- To Ka- Band cryogenic LNA module for very long baseline interferometry

Name: X- To Ka- Band cryogenic LNA module for very long baseline interferometry
Author: Fung, A., Samoska, L., Bowen, J., Montanez, S., Kooi, J., Soriano, M., Jacobs, C., Manthena, R., Hoppe, D., Akgiray, Ahmed Halid, Lai, R., Mei, X., Barsky, M.

İsim	X- To Ka- Band cryogenic LNA module for very long baseline interferometry
Yazar	Fung, A., Samoska, L., Bowen, J., Montanez, S., Kooi, J., Soriano, M., Jacobs, C., Manthena, R., Hoppe, D., Akgiray, Ahmed Halid, Lai, R., Mei, X., Barsky, M.
Basım Tarihi:	2020
Basım Yeri	- IEEE
Konu	Indium phosphide, HEMT, Low noise, Amplifier, Coaxial module, Cryogenic
Tür	Belge
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	978-1-7281-6815-9
Kayıt Numarası	708d6b7e-1258-4e6e-b24d-eb780fd12467
Lokasyon	Electrical & Electronics Engineering
Tarih	2020
Örnek Metin	We report a new result of a packaged low noise amplifier (LNA) module with wide bandwidth of 5 to 35 GHz and low noise temperature performance of 10 -18 K, while operated at 10 K ambient. The LNA used 3-stages of sub-50 nm gate length, 100% indium channel content indium phosphide (InP) high electron mobility transistors (HEMTs). Wideband cryogenic LNAs are important for future radio astronomy observatories. To our knowledge these results represent the lowest noise achieved in a wideband amplifier from 5-35 GHz.
DOI	10.1109/IMS30576.2020.9224106

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X- To Ka- Band cryogenic LNA module for very long baseline interferometry

Yazar Fung, A., Samoska, L., Bowen, J., Montanez, S., Kooi, J., Soriano, M., Jacobs, C., Manthena, R., Hoppe, D., Akgiray, Ahmed Halid, Lai, R., Mei, X., Barsky, M.

Basım Tarihi 2020

Basım Yeri - IEEE

Konu Indium phosphide, HEMT, Low noise, Amplifier, Coaxial module, Cryogenic

Tür Belge

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 978-1-7281-6815-9

Kayıt Numarası 708d6b7e-1258-4e6e-b24d-eb780fd12467

Lokasyon Electrical & Electronics Engineering

Tarih 2020

Örnek Metin We report a new result of a packaged low noise amplifier (LNA) module with wide bandwidth of 5 to 35 GHz and low noise temperature performance of 10 -18 K, while operated at 10 K ambient. The LNA used 3-stages of sub-50 nm gate length, 100% indium channel content indium phosphide (InP) high electron mobility transistors (HEMTs). Wideband cryogenic LNAs are important for future radio astronomy observatories. To our knowledge these results represent the lowest noise achieved in a wideband amplifier from 5-35 GHz.

DOI 10.1109/IMS30576.2020.9224106