Understanding selectivity on Germanium/SiO2 chemical mechanical planarization through design of experiments

Name: Understanding selectivity on Germanium/SiO2 chemical mechanical planarization through design of experiments
Author: Karagöz, Ayşe, Mal, J., Başım, Gül Bahar

İsim	Understanding selectivity on Germanium/SiO2 chemical mechanical planarization through design of experiments
Yazar	Karagöz, Ayşe, Mal, J., Başım, Gül Bahar
Basım Tarihi:	2015
Basım Yeri	- Cambridge University Press
Konu	CMP, Ge, Thin film
Tür	Belge
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	2-s2.0-84985987102
Kayıt Numarası	d330769c-6634-4c73-99a7-78c22ed32d11
Lokasyon	Mechanical Engineering
Tarih	2015
Notlar	Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Örnek Metin	The continuous trend of achieving more complex microelectronics with smaller nodes yet larger wafer sizes in microelectronics manufacturing lead to aggressive development requirements for chemical mechanical planarization (CMP) process. Particularly, beyond the 14 nm technology the development needs made it a must to introduce high mobility channel materials such as Ge. CMP is an enabler for integration of these new materials into future devices. In this study, we implemented a design of experiment (DOE) methodology in order to understand the optimized CMP slurry parameters such as optimal concentration of surface active agent (sodium dodecyl sulfate-SDS), concentration of abrasive particles and pH from the viewpoint of high removal rate and selectivity while maintaining a defect free surface finish. The responses examined were particle size distribution (slurry stability), zeta potential, material removal rate (MRR) and the surface defectivity as a function of the selected design variables. The impact of fumed silica particle loadings, oxidizer (H2O2) concentration, SDS surfactant concentration and pH were analyzed on Ge/silica selectivity through material removal rate (MRR) surface roughness and defectivity analyses.
DOI	10.1557/opl.2015.524
Cilt	1790

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Understanding selectivity on Germanium/SiO2 chemical mechanical planarization through design of experiments

Yazar Karagöz, Ayşe, Mal, J., Başım, Gül Bahar

Basım Tarihi 2015

Basım Yeri - Cambridge University Press

Konu CMP, Ge, Thin film

Tür Belge

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 2-s2.0-84985987102

Kayıt Numarası d330769c-6634-4c73-99a7-78c22ed32d11

Lokasyon Mechanical Engineering

Tarih 2015

Notlar Due to copyright restrictions, the access to the full text of this article is only available via subscription.

Örnek Metin The continuous trend of achieving more complex microelectronics with smaller nodes yet larger wafer sizes in microelectronics manufacturing lead to aggressive development requirements for chemical mechanical planarization (CMP) process. Particularly, beyond the 14 nm technology the development needs made it a must to introduce high mobility channel materials such as Ge. CMP is an enabler for integration of these new materials into future devices. In this study, we implemented a design of experiment (DOE) methodology in order to understand the optimized CMP slurry parameters such as optimal concentration of surface active agent (sodium dodecyl sulfate-SDS), concentration of abrasive particles and pH from the viewpoint of high removal rate and selectivity while maintaining a defect free surface finish. The responses examined were particle size distribution (slurry stability), zeta potential, material removal rate (MRR) and the surface defectivity as a function of the selected design variables. The impact of fumed silica particle loadings, oxidizer (H2O2) concentration, SDS surfactant concentration and pH were analyzed on Ge/silica selectivity through material removal rate (MRR) surface roughness and defectivity analyses.

DOI 10.1557/opl.2015.524

Cilt 1790