A model of chemical mechanical planarization to predict impact of pad conditioning on process performance

Name: A model of chemical mechanical planarization to predict impact of pad conditioning on process performance
Author: Başım, Gül Bahar, Kincal, S.

İsim	A model of chemical mechanical planarization to predict impact of pad conditioning on process performance
Yazar	Başım, Gül Bahar, Kincal, S.
Basım Tarihi:	2012
Basım Yeri	- Cambridge University Press
Konu	CMP, Microelectronics, Defects
Tür	Belge
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	2-s2.0-84879265336
Kayıt Numarası	ee4eaf03-a105-472f-9fda-e8a642c0a86c
Lokasyon	Mechanical Engineering
Tarih	2012
Notlar	Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Örnek Metin	This study presents an effort to couple a wafer removal rate profile model based on the locally relevant Preston equation to the change in pad thickness profile which reflects to post polish profile of the wafers after Chemical Mechanical Planarization. The result is a dynamic predictor of how the wafer removal rate profile shifts as the pad ages. These predictions can be used to fine tune the conditioner operating characteristics without having to carry out high cost and time consuming experiments. The accuracy of the predictions is demonstrated by individual confirmation experiments in addition to the evaluation of the defectivity performance with the varied pad conditioning profiles.
DOI	10.1557/opl.2012.1359
Cilt	1428

Kaynağa git Özyeğin Üniversitesi

Aramaya Dön

Özyeğin Üniversitesi

Kaynağa git

A model of chemical mechanical planarization to predict impact of pad conditioning on process performance

Yazar Başım, Gül Bahar, Kincal, S.

Basım Tarihi 2012

Basım Yeri - Cambridge University Press

Konu CMP, Microelectronics, Defects

Tür Belge

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 2-s2.0-84879265336

Kayıt Numarası ee4eaf03-a105-472f-9fda-e8a642c0a86c

Lokasyon Mechanical Engineering

Tarih 2012

Notlar Due to copyright restrictions, the access to the full text of this article is only available via subscription.

Örnek Metin This study presents an effort to couple a wafer removal rate profile model based on the locally relevant Preston equation to the change in pad thickness profile which reflects to post polish profile of the wafers after Chemical Mechanical Planarization. The result is a dynamic predictor of how the wafer removal rate profile shifts as the pad ages. These predictions can be used to fine tune the conditioner operating characteristics without having to carry out high cost and time consuming experiments. The accuracy of the predictions is demonstrated by individual confirmation experiments in addition to the evaluation of the defectivity performance with the varied pad conditioning profiles.

DOI 10.1557/opl.2012.1359

Cilt 1428