Studies on slurry design fundamentals for advanced CMP applications

Name: Studies on slurry design fundamentals for advanced CMP applications
Author: Başım, Gül Bahar, Karagöz, Ayşe, Özdemir, Zeynep, Vakarelski, I. U., Chen, L.

İsim	Studies on slurry design fundamentals for advanced CMP applications
Yazar	Başım, Gül Bahar, Karagöz, Ayşe, Özdemir, Zeynep, Vakarelski, I. U., Chen, L.
Basım Tarihi:	2013
Basım Yeri	- ECS
Tür	Belge
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	978-1-60768-427-5
Kayıt Numarası	dd492722-0856-4a37-b2bf-c650f6765fcc
Lokasyon	Mechanical Engineering
Tarih	2013
Notlar	Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Örnek Metin	New developments and device performance requirements in microelectronics industry add to the challenges in chemical mechanical planarization (CMP) process. One of the recently introduced materials is germanium which enables improved performance through better channel mobility in shallow trench isolation (STI) applications. This paper reports on the slurry design alternatives for Ge CMP with surfactant mediation to improve on the silica/germanium selectivity using colloidal silica slurry. In addition to the standard CMP tests to evaluate the material removal rates, atomic force microscopy (AFM) based wear tests were also conducted to evaluate single particle-surface interaction of the polishing system. Furthermore, nature of the surface oxide film of germanium was studied through contact angle measurements and surface roughness tested by AFM. It was observed that the CMP selectivity of the silica/germanium system and defectivity control were possible with a reasonable material removal rate value by using self-assembled structures of cationic surfactants.
DOI	10.1149/05039.0029ecst
Cilt	50

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Studies on slurry design fundamentals for advanced CMP applications

Yazar Başım, Gül Bahar, Karagöz, Ayşe, Özdemir, Zeynep, Vakarelski, I. U., Chen, L.

Basım Tarihi 2013

Basım Yeri - ECS

Tür Belge

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 978-1-60768-427-5

Kayıt Numarası dd492722-0856-4a37-b2bf-c650f6765fcc

Lokasyon Mechanical Engineering

Tarih 2013

Notlar Due to copyright restrictions, the access to the full text of this article is only available via subscription.

Örnek Metin New developments and device performance requirements in microelectronics industry add to the challenges in chemical mechanical planarization (CMP) process. One of the recently introduced materials is germanium which enables improved performance through better channel mobility in shallow trench isolation (STI) applications. This paper reports on the slurry design alternatives for Ge CMP with surfactant mediation to improve on the silica/germanium selectivity using colloidal silica slurry. In addition to the standard CMP tests to evaluate the material removal rates, atomic force microscopy (AFM) based wear tests were also conducted to evaluate single particle-surface interaction of the polishing system. Furthermore, nature of the surface oxide film of germanium was studied through contact angle measurements and surface roughness tested by AFM. It was observed that the CMP selectivity of the silica/germanium system and defectivity control were possible with a reasonable material removal rate value by using self-assembled structures of cationic surfactants.

DOI 10.1149/05039.0029ecst

Cilt 50