Chemical mechanical planarization studies on gallium nitride for improved performance

Name: Chemical mechanical planarization studies on gallium nitride for improved performance
Author: Karagöz, Ayşe, Başım, Gül Bahar, Siebert, M., Leunissen, L. A. H.

İsim	Chemical mechanical planarization studies on gallium nitride for improved performance
Yazar	Karagöz, Ayşe, Başım, Gül Bahar, Siebert, M., Leunissen, L. A. H.
Basım Tarihi:	2015
Basım Yeri	- IEEE
Konu	III-V semiconductors, Chemical mechanical polishing, Crystallography, Gallium compounds, Planarisation, Silicon compounds, Wide band gap semiconductors
Tür	Belge
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	2-s2.0-84964510423
Kayıt Numarası	6ea789dd-2e3a-41c6-a49e-25e9ae01069a
Lokasyon	Mechanical Engineering
Tarih	2015
Notlar	Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Örnek Metin	In this study, a systematic experimental approach has been followed to determine the conditions to promote material removal rate while controlling surface defectivity for GaN CMP. Silica based slurries were used to optimize the CMP conditions for a commercial GaN sample as a function of pH, and type of polishing pad and conditioning. In addition, CMP responses of Face A and Face B type crystallographic GaN surfaces were evaluated and compared to the 2" GaN wafer with unknown surface crystallographic structure. It is observed that the contact angle responses of the different crystallographic surfaces can help identify the type of GaN surface and support predicting the CMP performance simultaneously.

Kaynağa git Özyeğin Üniversitesi

Aramaya Dön

Özyeğin Üniversitesi

Kaynağa git

Chemical mechanical planarization studies on gallium nitride for improved performance

Yazar Karagöz, Ayşe, Başım, Gül Bahar, Siebert, M., Leunissen, L. A. H.

Basım Tarihi 2015

Basım Yeri - IEEE

Konu III-V semiconductors, Chemical mechanical polishing, Crystallography, Gallium compounds, Planarisation, Silicon compounds, Wide band gap semiconductors

Tür Belge

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 2-s2.0-84964510423

Kayıt Numarası 6ea789dd-2e3a-41c6-a49e-25e9ae01069a

Lokasyon Mechanical Engineering

Tarih 2015

Notlar Due to copyright restrictions, the access to the full text of this article is only available via subscription.

Örnek Metin In this study, a systematic experimental approach has been followed to determine the conditions to promote material removal rate while controlling surface defectivity for GaN CMP. Silica based slurries were used to optimize the CMP conditions for a commercial GaN sample as a function of pH, and type of polishing pad and conditioning. In addition, CMP responses of Face A and Face B type crystallographic GaN surfaces were evaluated and compared to the 2" GaN wafer with unknown surface crystallographic structure. It is observed that the contact angle responses of the different crystallographic surfaces can help identify the type of GaN surface and support predicting the CMP performance simultaneously.