A modeling study on the layout impact of with-in-die thickness range for STI CMP

Name: A modeling study on the layout impact of with-in-die thickness range for STI CMP
Author: Kıncal, S., Başım, Gül Bahar

İsim	A modeling study on the layout impact of with-in-die thickness range for STI CMP
Yazar	Kıncal, S., Başım, Gül Bahar
Basım Tarihi:	2013
Basım Yeri	- ECS
Konu	Chemical-mechanical planarization, Shallow-trench isolation, Optimization
Tür	Belge
Dil	İngilizce
Dijital	Evet
Yazma	Hayır
Kütüphane:	Özyeğin Üniversitesi
Demirbaş Numarası	1938-5862
Kayıt Numarası	209b0a82-7744-4cdd-9589-c4b6e5d713ba
Lokasyon	Mechanical Engineering
Tarih	2013
Notlar	Due to copyright restrictions, the access to the full text of this article is only available via subscription.
Örnek Metin	Chemical Mechanical Planarization process has a proven track record as an effective method for planarizing the wafer surface at multiple points of the semiconductor manufacturing flow. One of the most challenging aspects of the CMP process, particularly in applications like Shallow Trench Isolation (STI), is the difference in relative removal rates of the different materials that are being polished. A certain amount of over-polish is required to clear oxide on top of the nitride, however, this over-polish may also lead to significant problems like dishing and erosion (introducing additional topography after the film has been planarized). This work formulates a methodology to predict how this additional topography is modulated by incoming layout properties introducing a parameter to accurately characterize line and space width on a layout with random geometric shapes.
DOI	10.1149/05039.0083ecst
Cilt	50

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A modeling study on the layout impact of with-in-die thickness range for STI CMP

Yazar Kıncal, S., Başım, Gül Bahar

Basım Tarihi 2013

Basım Yeri - ECS

Konu Chemical-mechanical planarization, Shallow-trench isolation, Optimization

Tür Belge

Dil İngilizce

Dijital Evet

Yazma Hayır

Kütüphane Özyeğin Üniversitesi

Demirbaş Numarası 1938-5862

Kayıt Numarası 209b0a82-7744-4cdd-9589-c4b6e5d713ba

Lokasyon Mechanical Engineering

Tarih 2013

Notlar Due to copyright restrictions, the access to the full text of this article is only available via subscription.

Örnek Metin Chemical Mechanical Planarization process has a proven track record as an effective method for planarizing the wafer surface at multiple points of the semiconductor manufacturing flow. One of the most challenging aspects of the CMP process, particularly in applications like Shallow Trench Isolation (STI), is the difference in relative removal rates of the different materials that are being polished. A certain amount of over-polish is required to clear oxide on top of the nitride, however, this over-polish may also lead to significant problems like dishing and erosion (introducing additional topography after the film has been planarized). This work formulates a methodology to predict how this additional topography is modulated by incoming layout properties introducing a parameter to accurately characterize line and space width on a layout with random geometric shapes.

DOI 10.1149/05039.0083ecst

Cilt 50